We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSC883N03LSGATMA1 DISTI # V36:1790_06384720 | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP T/R RoHS: Compliant | 0 |
|
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSC883N03LSGATMA1 DISTI # 32628480 | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP T/R RoHS: Compliant | 15000 |
|
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1 | Infineon Technologies AG | - Bulk (Alt: BSC883N03LSGATMA1) RoHS: Compliant Min Qty: 1389 Container: Bulk | Americas - 0 |
|
| BSC883N03LSGXT DISTI # BSC883N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC883N03LSGATMA1 DISTI # 97Y1252 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:98A,Drain Source Voltage Vds:34V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| BSC883N03LS G DISTI # 726-BSC883N03LSG | Infineon Technologies AG | MOSFET N-Ch 34V 98A TDSON-8 RoHS: Compliant | 4969 |
|
| BSC883N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, N-Channel, MOSFET RoHS: Compliant | 9910 |
|
| BSC883N03LSGATMA1 DISTI # 2617421 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8 RoHS: Compliant | 4437 |
|
| BSC883N03LSGATMA1 DISTI # 2617421RL | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8 RoHS: Compliant | 0 |
|
| BSC883N03LSGATMA1 DISTI # 2617421 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8 RoHS: Compliant | 4437 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G |
MOSFET N-Ch 34V 98A TDSON-8 |
|
|
Mfr.#: BSC883N03LSGATMA1 OMO.#: OMO-BSC883N03LSGATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC883N03LS OMO.#: OMO-BSC883N03LS-1190 |
Neu und Original |
|
|
Mfr.#: BSC883N03LSG OMO.#: OMO-BSC883N03LSG-1190 |
Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC883N03LSGATMA1 |
MOSFET N-CH 34V 17A TDSON-8 |
|
|
Mfr.#: BSC883N03LSGATMA1 , TDZF |
Neu und Original |
|
|
Mfr.#: BSC883N03MS OMO.#: OMO-BSC883N03MS-1190 |
Neu und Original |
|
|
Mfr.#: BSC883N03MSG OMO.#: OMO-BSC883N03MSG-1190 |
Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC883N03MS G OMO.#: OMO-BSC883N03MS-G-126 |
IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8 |
|
|
Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8 |