 |  | | |
| PartNumber | BSC883N03LSGATMA1 | BSC883N03LSG | BSC883N03LSGATMA1 , TDZF |
| Description | MOSFET LV POWER MOS | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | BSC883N03LS BSC883N3LSGXT G SP000507422 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC883N03LSGATMA1 | MOSFET LV POWER MOS | |
| BSC883N03LSGXT | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) | ||
| BSC883N03LSG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC883N03LSGATMA1 , TDZF | Neu und Original | ||
Infineon Technologies |
BSC883N03LSGATMA1 | MOSFET N-CH 34V 17A TDSON-8 |