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SI9407BDY-T1-GE3

SI9407BDY-T1-GE3
Mfr. #:
SI9407BDY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -60V Vds 20V Vgs SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI9407BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI9407BDY-T1-GE3 DatasheetSI9407BDY-T1-GE3 Datasheet (P4-P6)SI9407BDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
4.7 A
Rds On - Drain-Source-Widerstand:
120 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
14.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI9
Transistortyp:
1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
8.5 nS
Abfallzeit:
30 ns
Produktart:
MOSFET
Anstiegszeit:
70 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns, 40 ns
Typische Einschaltverzögerungszeit:
10 ns, 30 ns
Teil # Aliase:
SI9407BDY-GE3
Gewichtseinheit:
0.017870 oz
Tags
SI9407BDY-T1-GE3, SI9407BDY-T1-G, SI9407BDY-T, SI9407BDY, SI9407BD, SI9407B, SI9407, SI940, SI94, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W
***ure Electronics
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
***ark
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No
***nell
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
SI9407BDY-T1-GE3
DISTI # SI9407BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 60V 4.7A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.4107
SI9407BDY-T1-GE3
DISTI # SI9407BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 60V 4.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4533
  • 500:$0.5741
  • 100:$0.7403
  • 10:$0.9370
  • 1:$1.0600
SI9407BDY-T1-GE3
DISTI # SI9407BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 60V 4.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4533
  • 500:$0.5741
  • 100:$0.7403
  • 10:$0.9370
  • 1:$1.0600
SI9407BDY-T1-GE3
DISTI # SI9407BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI9407BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 0
  • 1:$0.4219
  • 25:$0.4069
  • 62:$0.3929
  • 125:$0.3799
  • 312:$0.3699
  • 625:$0.3699
  • 1250:$0.3689
SI9407BDY-T1-GE3
DISTI # SI9407BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9407BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3539
  • 5000:$0.3439
  • 10000:$0.3299
  • 15000:$0.3209
  • 25000:$0.3119
SI9407BDY-T1-GE3
DISTI # 16P3885		Vishay IntertechnologiesTrans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3885)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.1200
  • 10:$0.9190
  • 25:$0.8480
  • 50:$0.7760
  • 100:$0.7050
  • 250:$0.6560
  • 500:$0.6060
SI9407BDY-T1-GE3
DISTI # 29X0553		Vishay IntertechnologiesMOSFET, P CHANNEL, -60V, -4.7A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Power Dissipation Pd:5W , RoHS Compliant: Yes0
  • 1:$0.4780
  • 2500:$0.4720
  • 5000:$0.4660
  • 10000:$0.4610
  • 15000:$0.4550
  • 25000:$0.4500
SI9407BDY-T1-GE3
DISTI # 16P3885		Vishay IntertechnologiesP CHANNEL MOSFET, -60V, 4.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes0
  • 1:$1.1200
  • 10:$0.9190
  • 25:$0.8480
  • 50:$0.7760
  • 100:$0.7050
  • 250:$0.6560
  • 500:$0.6060
SI9407BDY-T1-GE3.
DISTI # 26AC3352		Vishay IntertechnologiesP-CHANNEL 60-V (D-S) MOSFET , ROHS COMPLIANT: NO0
  • 1:$0.4780
  • 2500:$0.4720
  • 5000:$0.4660
  • 10000:$0.4610
  • 15000:$0.4550
  • 25000:$0.4500
SI9407BDY-T1-GE3
DISTI # 70026452		Vishay SiliconixMOSFET,P-Ch,Vds -60V,Vgs +/- 20V,Rds(on) 150mohm,Id 4.7A,SO-8,Pd 5W
RoHS: Compliant		0
  • 1:$0.7400
  • 25:$0.7100
  • 100:$0.6800
  • 250:$0.6400
  • 500:$0.6000
SI9407BDY-T1-GE3
DISTI # 781-SI9407BDY-T1-GE3		Vishay IntertechnologiesMOSFET -60V Vds 20V Vgs SO-8
RoHS: Compliant		0
  • 1:$1.1200
  • 10:$0.9190
  • 100:$0.7050
  • 500:$0.6060
  • 1000:$0.4790
  • 2500:$0.4470
  • 5000:$0.4250
  • 10000:$0.4090
SI9407BDY-T1-GE3
DISTI # SI9407BDY-GE3		Vishay IntertechnologiesP-Ch 60V 4,7A 2,4W 0,12R SO8
RoHS: Compliant		0
  • 50:€0.3720
  • 100:€0.3120
  • 500:€0.2820
  • 2500:€0.2730
SI9407BDY-T1-GE3
DISTI # 2101454		Vishay IntertechnologiesMOSFET, P CH, 60V, 4.7A, 8SOIC
RoHS: Compliant		50
  • 5:£0.9090
  • 25:£0.8860
  • 100:£0.6500
SI9407BDY-T1-GE3
DISTI # 2101454		Vishay IntertechnologiesMOSFET, P CH, 60V, 4.7A, 8SOIC
RoHS: Compliant		50
  • 1:$1.6800
  • 10:$1.4900
  • 100:$1.1800
  • 500:$0.9090
  • 1000:$0.7180
SI9407BDY-T1-GE3.Vishay IntertechnologiesMOSFET 60V 4.7A 5.0W 120mohm @ 10V
RoHS: Compliant		Americas -
  • 25:$0.5550
SI9407BDY-T1-GE3Vishay IntertechnologiesMOSFET -60V Vds 20V Vgs SO-8
RoHS: Compliant		Americas - Stock
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1989
    Menge eingeben:
    Der aktuelle Preis von SI9407BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,11 $
    1,11 $
    10
    0,92 $
    9,18 $
    100
    0,70 $
    70,40 $
    500
    0,60 $
    302,50 $
    1000
    0,48 $
    478,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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