PartNumber | SI9407BDY-T1-E3 | SI9407BDY-T1 | SI9407BDY-T1-GE |
Description | MOSFET -60V Vds 20V Vgs SO-8 | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SO-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 4.7 A | - | - |
Rds On Drain Source Resistance | 100 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 14.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 5 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Series | SI9 | - | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SI9407BDY-E3 | - | - |
Unit Weight | 0.017870 oz | - | - |