SI9407BDY-T1-GE3

Mfr. #:: SI9407BDY-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET P-CH 60V 4.7A 8-SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI9407BDY-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: VISHAY

Produktkategorie: FETs - Einzeln

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI9407BDY-GE3

Gewichtseinheit: 0.017870 oz

Montageart: SMD/SMT

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 1 Channel

Lieferanten-Geräte-Paket: 8-SO

Aufbau: Single

FET-Typ: MOSFET P-Kanal, Metalloxid

Leistung max: 5W

Transistor-Typ: 1 P-Channel

Drain-zu-Source-Spannung-Vdss: 60V

Eingangskapazität-Ciss-Vds: 600pF @ 30V

FET-Funktion: Standard

Strom-Dauer-Drain-Id-25°C: 4.7A (Tc)

Rds-On-Max-Id-Vgs: 120 mOhm @ 3.2A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Lade-Qg-Vgs: 22nC @ 10V

Pd-Verlustleistung: 2.4 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 30 ns

Anstiegszeit: 70 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 3.2 A

Vds-Drain-Source-Breakdown-Voltage: - 60 V

Rds-On-Drain-Source-Widerstand: 120 mOhms

Transistor-Polarität: P-Kanal

Typische-Ausschaltverzögerungszeit: 40 ns

Typische-Einschaltverzögerungszeit: 30 ns

Kanal-Modus: Erweiterung

Tags: SI9407BDY-T1-GE3, SI9407BDY-T1-G, SI9407BDY-T, SI9407BDY, SI9407BD, SI9407B, SI9407, SI940, SI94, SI9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9407BDY-T1-GE3 Beschreibung

***ied Electronics & Automation: MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W

***ure Electronics: SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8

***ark: Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.1Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No

***nell: MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.4107
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.4533 500:$0.5741 100:$0.7403 10:$0.9370 1:$1.0600
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 60V 4.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.4533 500:$0.5741 100:$0.7403 10:$0.9370 1:$1.0600
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI9407BDY-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.4219 25:$0.4069 62:$0.3929 125:$0.3799 312:$0.3699 625:$0.3699 1250:$0.3689
SI9407BDY-T1-GE3 DISTI # SI9407BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9407BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3539 5000:$0.3439 10000:$0.3299 15000:$0.3209 25000:$0.3119
SI9407BDY-T1-GE3 DISTI # 16P3885	Vishay Intertechnologies	Trans MOSFET P-CH 60V 3.2A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3885) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.1200 10:$0.9190 25:$0.8480 50:$0.7760 100:$0.7050 250:$0.6560 500:$0.6060
SI9407BDY-T1-GE3 DISTI # 29X0553	Vishay Intertechnologies	MOSFET, P CHANNEL, -60V, -4.7A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Power Dissipation Pd:5W , RoHS Compliant: Yes	0	1:$0.4780 2500:$0.4720 5000:$0.4660 10000:$0.4610 15000:$0.4550 25000:$0.4500
SI9407BDY-T1-GE3 DISTI # 16P3885	Vishay Intertechnologies	P CHANNEL MOSFET, -60V, 4.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes	0	1:$1.1200 10:$0.9190 25:$0.8480 50:$0.7760 100:$0.7050 250:$0.6560 500:$0.6060
SI9407BDY-T1-GE3. DISTI # 26AC3352	Vishay Intertechnologies	P-CHANNEL 60-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.4780 2500:$0.4720 5000:$0.4660 10000:$0.4610 15000:$0.4550 25000:$0.4500
SI9407BDY-T1-GE3 DISTI # 70026452	Vishay Siliconix	MOSFET,P-Ch,Vds -60V,Vgs +/- 20V,Rds(on) 150mohm,Id 4.7A,SO-8,Pd 5W RoHS: Compliant	0	1:$0.7400 25:$0.7100 100:$0.6800 250:$0.6400 500:$0.6000
SI9407BDY-T1-GE3 DISTI # 781-SI9407BDY-T1-GE3	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs SO-8 RoHS: Compliant	0	1:$1.1200 10:$0.9190 100:$0.7050 500:$0.6060 1000:$0.4790 2500:$0.4470 5000:$0.4250 10000:$0.4090
SI9407BDY-T1-GE3 DISTI # SI9407BDY-GE3	Vishay Intertechnologies	P-Ch 60V 4,7A 2,4W 0,12R SO8 RoHS: Compliant	0	50:€0.3720 100:€0.3120 500:€0.2820 2500:€0.2730
SI9407BDY-T1-GE3 DISTI # 2101454	Vishay Intertechnologies	MOSFET, P CH, 60V, 4.7A, 8SOIC RoHS: Compliant	50	5:£0.9090 25:£0.8860 100:£0.6500
SI9407BDY-T1-GE3 DISTI # 2101454	Vishay Intertechnologies	MOSFET, P CH, 60V, 4.7A, 8SOIC RoHS: Compliant	50	1:$1.6800 10:$1.4900 100:$1.1800 500:$0.9090 1000:$0.7180
SI9407BDY-T1-GE3.	Vishay Intertechnologies	MOSFET 60V 4.7A 5.0W 120mohm @ 10V RoHS: Compliant	Americas -	25:$0.5550
SI9407BDY-T1-GE3	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - Stock

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI9407BDY-T1-E3 OMO.#: OMO-SI9407BDY-T1-E3	MOSFET -60V Vds 20V Vgs SO-8
	Mfr.#: SI9407BDY-T1-GE3 OMO.#: OMO-SI9407BDY-T1-GE3	MOSFET -60V Vds 20V Vgs SO-8
	Mfr.#: SI9407BDY-T1-GE3-CUT TAPE OMO.#: OMO-SI9407BDY-T1-GE3-CUT-TAPE-1190	Neu und Original
	Mfr.#: SI9407BD OMO.#: OMO-SI9407BD-1190	Neu und Original
	Mfr.#: SI9407BDY OMO.#: OMO-SI9407BDY-1190	Neu und Original
	Mfr.#: SI9407BDY-T1 OMO.#: OMO-SI9407BDY-T1-1190	Neu und Original
	Mfr.#: SI9407BDY-T1-E3 OMO.#: OMO-SI9407BDY-T1-E3-VISHAY	MOSFET P-CH 60V 4.7A 8-SOIC
	Mfr.#: SI9407BDY-T1-GE OMO.#: OMO-SI9407BDY-T1-GE-1190	Neu und Original
	Mfr.#: SI9407BDY-T1-GE3 OMO.#: OMO-SI9407BDY-T1-GE3-VISHAY	MOSFET P-CH 60V 4.7A 8-SOIC
	Mfr.#: SI9407BDY-T1-GE3 GE3 OMO.#: OMO-SI9407BDY-T1-GE3-GE3-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von SI9407BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,38 $~~; ~~0,38 $~~

10: ~~0,36 $~~; ~~3,61 $~~

100: ~~0,34 $~~; ~~34,17 $~~

500: ~~0,32 $~~; ~~161,35 $~~

1000: ~~0,30 $~~; ~~303,70 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI9407BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes