APT100GN60LDQ4G

APT100GN60LDQ4G
Mfr. #:
APT100GN60LDQ4G
Hersteller:
Microchip / Microsemi
Beschreibung:
IGBT Transistors FG, IGBT, 600V, TO-264, RoHS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT100GN60LDQ4G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT100GN60LDQ4G DatasheetAPT100GN60LDQ4G Datasheet (P4-P6)APT100GN60LDQ4G Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-264-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.5 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
229 A
Pd - Verlustleistung:
625 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
229 A
Höhe:
5.21 mm
Länge:
26.49 mm
Betriebstemperaturbereich:
- 55 C to + 175 C
Breite:
20.5 mm
Marke:
Mikrochip / Mikrosemi
Kontinuierlicher Kollektorstrom:
229 A
Gate-Emitter-Leckstrom:
600 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1
Unterkategorie:
IGBTs
Gewichtseinheit:
0.373904 oz
Tags
APT100GN, APT100G, APT100, APT10, APT1, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
APT100GN60LDQ4G
DISTI # APT100GN60LDQ4G-ND
Microsemi CorporationIGBT 600V 229A 625W TO264
RoHS: Compliant
Min Qty: 1
Container: Tube
50In Stock
  • 500:$10.4514
  • 100:$12.2533
  • 25:$13.3344
  • 10:$14.4160
  • 1:$15.8600
APT100GN60LDQ4G
DISTI # APT100GN60LDQ4G
Microchip Technology IncTrans IGBT Chip N-CH 600V 229A 3-Pin(3+Tab) TO-264 - Rail/Tube (Alt: APT100GN60LDQ4G)
RoHS: Compliant
Min Qty: 38
Container: Tube
Americas - 0
  • 380:$8.4900
  • 190:$8.5900
  • 114:$8.8900
  • 76:$9.1900
  • 38:$9.4900
APT100GN60LDQ4G
DISTI # 494-APT100GN60LDQ4G
Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
RoHS: Compliant
19
  • 1:$14.8100
  • 10:$13.4600
  • 25:$12.4500
  • 50:$11.7700
  • 100:$11.3600
  • 250:$10.3700
  • 500:$9.7100
APT100GN60LDQ4G
DISTI # APT100GN60LDQ4G
Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant
0
  • 38:$9.0000
  • 100:$8.7800
  • 500:$8.6600
Bild Teil # Beschreibung
IRGPS46160DPBF

Mfr.#: IRGPS46160DPBF

OMO.#: OMO-IRGPS46160DPBF

IGBT Transistors 600V TRENCH IGBT ULTRAFAST
IRF200P222

Mfr.#: IRF200P222

OMO.#: OMO-IRF200P222

MOSFET IFX OPTIMOS
IRF200P222

Mfr.#: IRF200P222

OMO.#: OMO-IRF200P222-INFINEON-TECHNOLOGIES

MOSFET N-CH 200V 182A TO247AC
IRGPS46160DPBF

Mfr.#: IRGPS46160DPBF

OMO.#: OMO-IRGPS46160DPBF-INFINEON-TECHNOLOGIES

IGBT Transistors 600V TRENCH IGBT ULTRAFAST
Verfügbarkeit
Aktie:
19
Auf Bestellung:
2002
Menge eingeben:
Der aktuelle Preis von APT100GN60LDQ4G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
14,81 $
14,81 $
10
13,46 $
134,60 $
25
12,45 $
311,25 $
50
11,77 $
588,50 $
100
11,36 $
1 136,00 $
250
10,37 $
2 592,50 $
500
9,71 $
4 855,00 $
1000
8,66 $
8 660,00 $
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