IPD80P03P4L07ATMA1

Mfr. #:: IPD80P03P4L07ATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET P-CH 30V 80A TO252-3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPD80P03P4L07ATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: IPD80, IPD8, IPD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD80P03P4L07ATMA1 Beschreibung

***Components: On a Reel of 2500, P-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK Infineon IPD80P03P4L07ATMA1

***p One Stop Japan: Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R

***et Europe: Trans MOSFET P-CH 30V 80A 3-Pin TO-252 T/R

***i-Key: MOSFET P-CH 30V 80A TO252-3

***ronik: P-CH 30V 80A 6.8mOhm TO252-3

***ark: Mosfet, Aec-Q101, P-Ch, -30V, To-252; Transistor Polarity:p Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0056Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, P-CH, -30V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:88W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS-P2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, AEC-Q101, CA-P, -30V, TO-252; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-80A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0056ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-1.5V; Dissipazione di Potenza Pd:88W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS-P2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: P-channel - Logic Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested; Intended for reverse battery protection | Benefits: No charge pump required for high side drive.; Simple interface drive circuit; World's lowest RDSon at 30V; Highest current capability; Lowest switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Standard packages TO-252, TO-263, TO-220, TO-262 | Target Applications: High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors); Bridge configuration could be realized with 30V P-Channel as high side device with no need of charge pump

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPD80P03P4L07ATMA1 DISTI # V72:2272_06384455	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	75000:$0.5329 30000:$0.5431 15000:$0.5534 6000:$0.5636 3000:$0.5739 1000:$0.5840 500:$0.7330 250:$0.7689 100:$0.8578 50:$0.9959 25:$1.1143 10:$1.1211 1:$1.4374
IPD80P03P4L07ATMA1 DISTI # IPD80P03P4L07ATMA1CT-ND	Infineon Technologies AG	MOSFET P-CH 30V 80A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2506In Stock	1000:$0.6500 500:$0.8234 100:$0.9967 10:$1.2780 1:$1.4300
IPD80P03P4L07ATMA1 DISTI # IPD80P03P4L07ATMA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 30V 80A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2506In Stock	1000:$0.6500 500:$0.8234 100:$0.9967 10:$1.2780 1:$1.4300
IPD80P03P4L07ATMA1 DISTI # IPD80P03P4L07ATMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 30V 80A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	12500:$0.5385 5000:$0.5596 2500:$0.5890
IPD80P03P4L07ATMA1 DISTI # 32898824	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	13:$1.4374
IPD80P03P4L07ATMA1 DISTI # 20247069	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2260	2260:$0.5518
IPD80P03P4L07ATMA1 DISTI # SP000396296	Infineon Technologies AG	MOSFET P-CH 30V 80A TO252-3 (Alt: SP000396296) RoHS: Compliant Min Qty: 2500	Europe - 0	25000:€0.5759 15000:€0.6149 10000:€0.6759 5000:€0.7559 2500:€0.9689
IPD80P03P4L07XT DISTI # IPD80P03P4L07ATMA1	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD80P03P4L07ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.5499 15000:$0.5599 10000:$0.5799 5000:$0.6019 2500:$0.6239
IPD80P03P4L07ATMA1 DISTI # 12AC9715	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-252,Transistor Polarity:P Channel,Continuous Drain Current Id:-80A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes	7941	1000:$0.6080 500:$0.7700 250:$0.8200 100:$0.8710 50:$0.9570 25:$1.0400 10:$1.1300 1:$1.3200
IPD80P03P4L-07 DISTI # 726-IPD80P03P4L07	Infineon Technologies AG	MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 RoHS: Compliant	19869	1:$1.3100 10:$1.1200 100:$0.8620 500:$0.7620 1000:$0.6020 2500:$0.5330 10000:$0.5130
IPD80P03P4L07ATMA1 DISTI # 726-IPD80P03P4L07ATM	Infineon Technologies AG	MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 RoHS: Compliant	4584	1:$1.4200 10:$1.2100 100:$0.9320 500:$0.8230 1000:$0.6500 2500:$0.5600 10000:$0.5550
IPD80P03P4L07ATMA1 DISTI # 1107433P	Infineon Technologies AG	MOSFET P-CHAN OPTIMOS-P2 30V 80A TO252, RL	1880	1000:£0.4180 400:£0.4910 100:£0.5780
IPD80P03P4L07ATMA1 DISTI # 2709981	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-252 RoHS: Compliant	7856	100:$1.5100 10:$1.9300 1:$2.1600
IPD80P03P4L07ATMA1 DISTI # 2709981	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-252	8052	500:£0.5930 250:£0.6320 100:£0.6710 10:£0.9280 1:£1.1600

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPD80P03P4L-07 OMO.#: OMO-IPD80P03P4L-07	MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
	Mfr.#: IPD80P03P4L07ATMA1 OMO.#: OMO-IPD80P03P4L07ATMA1	MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
	Mfr.#: IPD80P03P4L-07 OMO.#: OMO-IPD80P03P4L-07-1190	MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
	Mfr.#: IPD80P03P4L07ATMA1 OMO.#: OMO-IPD80P03P4L07ATMA1-INFINEON-TECHNOLOGIES	MOSFET P-CH 30V 80A TO252-3

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von IPD80P03P4L07ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

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1: ~~0,00 $~~; ~~0,00 $~~

10: ~~0,00 $~~; ~~0,00 $~~

100: ~~0,00 $~~; ~~0,00 $~~

500: ~~0,00 $~~; ~~0,00 $~~

1000: ~~0,00 $~~; ~~0,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPD80P03P4L07ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes