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SIHB33N60E-GE3

SIHB33N60E-GE3
Mfr. #:
SIHB33N60E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB33N60E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB33N60E-GE3 DatasheetSIHB33N60E-GE3 Datasheet (P4-P6)SIHB33N60E-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SIHB33N60E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
33 A
Rds On - Drain-Source-Widerstand:
99 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
100 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
278 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
E
Breite:
9.65 mm
Marke:
Vishay / Siliconix
Abfallzeit:
54 ns
Produktart:
MOSFET
Anstiegszeit:
60 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
99 ns
Typische Einschaltverzögerungszeit:
28 ns
Gewichtseinheit:
0.050717 oz
Tags
SIHB33, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
***et Europe
Trans MOSFET N-CH 600V 33A 3-Pin D2PAK
***Components
MOSFET 600V 33A E SERIES D2PAK
***ure Electronics
MOSFET 600V 99MOHM@10V 33A N-CH E-SRS
***ark
MOSFET, N CH, 600V, 33A, TO-263-3
***i-Key
MOSFET N-CH 600V 33A TO-263
***ronik
N-CH 600V 99mOhm 33A TO263
***
N-CH 600V T0-263
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHB33N60E-GE3
DISTI # V99:2348_09218863		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		802
  • 1000:$3.5080
  • 500:$3.8770
  • 250:$3.9920
  • 100:$4.1310
  • 10:$5.0710
  • 1:$6.7793
SIHB33N60E-GE3
DISTI # V36:1790_09218863		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000:$3.0270
SIHB33N60E-GE3
DISTI # SIHB33N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 2500:$3.1002
  • 1000:$3.2634
  • 500:$3.8695
  • 100:$4.5455
  • 10:$5.5480
  • 1:$6.1800
SIHB33N60E-GE3
DISTI # 33725812		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		802
  • 3:$6.7793
SIHB33N60E-GE3
DISTI # 33350541		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		573
  • 21:$3.8000
SIHB33N60E-GE3
DISTI # 29408606		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		126
  • 4:$2.6227
SIHB33N60E-GE3
DISTI # SIHB33N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK - Tape and Reel (Alt: SIHB33N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$2.7900
  • 6000:$2.8900
  • 4000:$2.9900
  • 2000:$3.0900
  • 1000:$3.1900
SIHB33N60E-GE3
DISTI # SIHB33N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK (Alt: SIHB33N60E-GE3)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 500:€2.2900
  • 300:€2.4900
  • 200:€2.7900
  • 100:€3.3900
  • 50:€4.2900
SIHB33N60E-GE3
DISTI # 68W7037		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK - Bulk (Alt: 68W7037)
RoHS: Not Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1000:$4.6300
  • 500:$4.6400
  • 100:$5.3000
  • 50:$5.6900
  • 25:$6.0600
  • 10:$6.4500
  • 1:$7.7800
SIHB33N60E-GE3
DISTI # 19X1931		Vishay IntertechnologiesPower MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V RoHS Compliant: Yes0
  • 500:$4.1400
  • 100:$4.2800
  • 50:$4.5900
  • 25:$4.9000
  • 10:$5.2000
  • 1:$6.2700
SIHB33N60E-GE3
DISTI # 68W7037		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes573
  • 1:$2.4700
  • 10:$2.4700
  • 25:$2.4700
  • 50:$2.4700
  • 100:$2.4700
  • 500:$2.4700
SIHB33N60E-GE3
DISTI # 78-SIHB33N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1:$6.2100
  • 10:$5.1500
  • 100:$4.2300
  • 250:$4.1000
  • 500:$3.6800
  • 1000:$3.1000
  • 2000:$2.9500
SIHB33N60E-E3
DISTI # 78-SIHB33N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1000:$3.4600
  • 2000:$3.2900
SIHB33N60E-GE3
DISTI # 2364072		Vishay IntertechnologiesMOSFET, N-CH, 600V, 33A, D2PAK
RoHS: Compliant		0
  • 100:$6.8600
  • 10:$8.3700
  • 1:$9.3100
SIHB33N60E-GE3
DISTI # 2364072		Vishay IntertechnologiesMOSFET, N-CH, 600V, 33A, D2PAK508
  • 100:£3.8400
  • 10:£4.6700
  • 1:£6.2100
SIHB33N60E-GE3
DISTI # TMOSP10873		Vishay IntertechnologiesN-CH 600V 99mOhm 33A TO263
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 1000:$2.8800
SIHB33N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas - 1600
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von SIHB33N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,21 $
    6,21 $
    10
    5,15 $
    51,50 $
    100
    4,23 $
    423,00 $
    250
    4,10 $
    1 025,00 $
    500
    3,68 $
    1 840,00 $
    1000
    3,10 $
    3 100,00 $
    2000
    2,95 $
    5 900,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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