PartNumber | SIHB33N60EF-GE3 | SIHB33N60E-GE3 | SIHB33N60E-E3 |
Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Packaging | Bulk | Tube | Bulk |
Series | EF | E | E |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.068654 oz | 0.050717 oz | 0.050717 oz |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | TO-263-3 | TO-263-3 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 600 V | 600 V |
Id Continuous Drain Current | - | 33 A | 33 A |
Rds On Drain Source Resistance | - | 99 mOhms | 99 mOhms |
Vgs th Gate Source Threshold Voltage | - | 4 V | 4 V |
Vgs Gate Source Voltage | - | 30 V | 30 V |
Qg Gate Charge | - | 100 nC | 100 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 278 W | 278 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 4.83 mm | - |
Length | - | 10.67 mm | - |
Width | - | 9.65 mm | - |
Fall Time | - | 54 ns | 54 ns |
Rise Time | - | 60 ns | 60 ns |
Typical Turn Off Delay Time | - | 99 ns | 99 ns |
Typical Turn On Delay Time | - | 28 ns | 28 ns |
Part # Aliases | - | - | SIHB33N60E |