OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SIHB33N60ET1-GE3

SIHB33N60ET1-GE3
Mfr. #:
SIHB33N60ET1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET N-Channel 600V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB33N60ET1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB33N60ET1-GE3 DatasheetSIHB33N60ET1-GE3 Datasheet (P4-P6)SIHB33N60ET1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SIHB33N60ET1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
33 A
Rds On - Drain-Source-Widerstand:
98 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
103 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
278 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
E
Breite:
9.65 mm
Marke:
Vishay / Siliconix
Abfallzeit:
48 ns
Produktart:
MOSFET
Anstiegszeit:
43 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
161 ns
Typische Einschaltverzögerungszeit:
28 ns
Gewichtseinheit:
0.050717 oz
Tags
SIHB33, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 33A TO263
***et
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHB33N60ET1-GE3
DISTI # SIHB33N60ET1-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO263
RoHS: Not compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$3.6630
SIHB33N60ET1-GE3
DISTI # SIHB33N60ET1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK T/R - Bulk (Alt: SIHB33N60ET1-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Bulk		Americas - 0
  • 800:$3.1900
  • 1600:$3.0900
  • 3200:$2.9900
  • 4800:$2.8900
  • 8000:$2.7900
SIHB33N60ET1-GE3
DISTI # 78-SIHB33N60ET1-GE3		Vishay IntertechnologiesMOSFET N-Channel 600V
RoHS: Compliant		0
  • 1:$6.2200
  • 10:$5.1600
  • 100:$4.2400
  • 250:$4.1100
  • 500:$3.6900
  • 800:$3.1100
  • 2400:$2.9600
Bild Teil # Beschreibung
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3

 MOSFET N-Channel 600V
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60ET5-GE3

Mfr.#: SIHB33N60ET5-GE3

OMO.#: OMO-SIHB33N60ET5-GE3

 MOSFET 600V Vds E Series D2PAK TO-263
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3-VISHAY

 IGBT Transistors MOSFET N-Channel 600V
SIHB33N60E-E3

Mfr.#: SIHB33N60E-E3

OMO.#: OMO-SIHB33N60E-E3-317

 RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3-VISHAY

 RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60EF-GE3-CUT TAPE

Mfr.#: SIHB33N60EF-GE3-CUT TAPE

OMO.#: OMO-SIHB33N60EF-GE3-CUT-TAPE-1190

 Neu und Original
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3-VISHAY

 MOSFET N-CH 600V 33A TO-263
SIHB33N60ET5-GE3

Mfr.#: SIHB33N60ET5-GE3

OMO.#: OMO-SIHB33N60ET5-GE3-VISHAY

 MOSFET N-CH 600V 33A TO263
Verfügbarkeit
Aktie:
800
Auf Bestellung:
2783
Menge eingeben:
Der aktuelle Preis von SIHB33N60ET1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,21 $
6,21 $
10
5,15 $
51,50 $
100
4,23 $
423,00 $
250
4,10 $
1 025,00 $
500
3,68 $
1 840,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
  • -12 V and -20 V P-Channel Gen III MOSFETs
    -12 V and -20 V P-Channel Gen III MOSFETs
    Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
  • DG2788A Dual DPDT / Quad SPDT Analog Switch
    DG2788A Dual DPDT / Quad SPDT Analog Switch
    Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
  • Compare SIHB33N60ET1-GE3
    Compare SIHB33N60ET1-GE3
    SIHB33N60E vs SIHB33N60EE3 vs SIHB33N60EGE3
  • Smart Load Switches
    Smart Load Switches
    Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
  • SUM70101EL 100 V P-Channel MOSFET
    SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • DGQ2788A AEC-Q100 Qualified Analog Switch
    DGQ2788A AEC-Q100 Qualified Analog Switch
    The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
More Newest Products
Top