BSC026N04LSATMA1

BSC026N04LSATMA1
Mfr. #:
BSC026N04LSATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 40V 23A 8TDSON
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC026N04LSATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC026N04LSATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
BSC026N04LS SP001067014
Handelsname
OptiMOS
Paket-Koffer
TDSON-8
Technologie
Si
Tags
BSC026N0, BSC026, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Teil # Mfg. Beschreibung Aktie Preis
BSC026N04LSATMA1
DISTI # V72:2272_06384585
Infineon Technologies AGTrans MOSFET N-CH 40V 23A 8-Pin TDSON T/R
RoHS: Compliant
4454
  • 3000:$0.5401
  • 1000:$0.5456
  • 500:$0.6700
  • 250:$0.7470
  • 100:$0.7553
  • 25:$0.9222
  • 10:$0.9497
  • 1:$1.0834
BSC026N04LSATMA1
DISTI # BSC026N04LSATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 40V 23A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
328In Stock
  • 1000:$0.6900
  • 500:$0.8740
  • 100:$1.1270
  • 10:$1.4260
  • 1:$1.6100
BSC026N04LSATMA1
DISTI # BSC026N04LSATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 40V 23A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
328In Stock
  • 1000:$0.6900
  • 500:$0.8740
  • 100:$1.1270
  • 10:$1.4260
  • 1:$1.6100
BSC026N04LSATMA1
DISTI # BSC026N04LSATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 40V 23A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.5940
BSC026N04LSATMA1
DISTI # 31237395
Infineon Technologies AGTrans MOSFET N-CH 40V 23A 8-Pin TDSON T/R
RoHS: Compliant
10000
  • 5000:$0.5184
BSC026N04LSATMA1
DISTI # 30883411
Infineon Technologies AGTrans MOSFET N-CH 40V 23A 8-Pin TDSON T/R
RoHS: Compliant
4454
  • 3000:$0.5401
  • 1000:$0.5456
  • 500:$0.6700
  • 250:$0.7470
  • 100:$0.7553
  • 25:$0.9222
  • 13:$0.9497
BSC026N04LSATMA1
DISTI # BSC026N04LS
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON T/R (Alt: BSC026N04LS)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 25000
  • 5000:$0.4860
  • 10000:$0.4660
  • 15000:$0.4597
  • 25000:$0.4418
  • 50000:$0.4361
  • 125000:$0.4253
  • 250000:$0.4149
BSC026N04LSATMA1
DISTI # BSC026N04LSATMA1
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC026N04LSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.5849
  • 10000:$0.5629
  • 20000:$0.5429
  • 30000:$0.5249
  • 50000:$0.5149
BSC026N04LSATMA1
DISTI # 13AC8327
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power DissipationRoHS Compliant: Yes324
  • 1:$1.3400
  • 10:$1.1400
  • 25:$1.0500
  • 50:$0.9620
  • 100:$0.8730
  • 250:$0.8230
  • 500:$0.7720
  • 1000:$0.6090
BSC026N04LSATMA1
DISTI # 726-BSC026N04LSATMA1
Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant
3984
  • 1:$1.3400
  • 10:$1.1400
  • 100:$0.8730
  • 500:$0.7720
  • 1000:$0.6090
  • 5000:$0.5400
BSC026N04LS
DISTI # 726-BSC026N04LS
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
537
  • 1:$1.3400
  • 10:$1.1400
  • 100:$0.8730
  • 500:$0.7720
  • 1000:$0.6090
BSC026N04LSATMA1
DISTI # 2725804
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON
RoHS: Compliant
709
  • 5:£0.9730
  • 25:£0.8790
  • 100:£0.6730
  • 250:£0.6350
  • 500:£0.5960
BSC026N04LSATMA1
DISTI # C1S322000381108
Infineon Technologies AGTrans MOSFET N-CH 40V 23A 8-Pin TDSON T/R
RoHS: Compliant
4454
  • 250:$0.7481
  • 100:$0.7744
  • 25:$0.9537
  • 10:$0.9576
BSC026N04LSATMA1
DISTI # C1S322000596074
Infineon Technologies AGMOSFETs
RoHS: Compliant
10000
  • 5000:$0.6070
BSC026N04LSATMA1
DISTI # 2725804
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON
RoHS: Compliant
333
  • 1:$2.5700
  • 10:$2.2800
  • 100:$1.8000
  • 500:$1.4000
  • 1000:$1.1000
Bild Teil # Beschreibung
BSC026N04LS

Mfr.#: BSC026N04LS

OMO.#: OMO-BSC026N04LS

MOSFET DIFFERENTIATED MOSFETS
BSC026N02KS G

Mfr.#: BSC026N02KS G

OMO.#: OMO-BSC026N02KS-G

MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC026N08NS5ATMA1

Mfr.#: BSC026N08NS5ATMA1

OMO.#: OMO-BSC026N08NS5ATMA1

MOSFET N-Ch 80V 100A TDSON-8
BSC026N02KSGAUMA1

Mfr.#: BSC026N02KSGAUMA1

OMO.#: OMO-BSC026N02KSGAUMA1

MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC026N02KS

Mfr.#: BSC026N02KS

OMO.#: OMO-BSC026N02KS-1190

Neu und Original
BSC026N02KS G

Mfr.#: BSC026N02KS G

OMO.#: OMO-BSC026N02KS-G-1190

MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC026N02KSG

Mfr.#: BSC026N02KSG

OMO.#: OMO-BSC026N02KSG-1190

Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC026N02KSGAUMA1

Mfr.#: BSC026N02KSGAUMA1

OMO.#: OMO-BSC026N02KSGAUMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 20V 100A TDSON-8
BSC026N04LS

Mfr.#: BSC026N04LS

OMO.#: OMO-BSC026N04LS-1190

Trans MOSFET N-CH 40V 23A
BSC026N04LSATMA1

Mfr.#: BSC026N04LSATMA1

OMO.#: OMO-BSC026N04LSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 23A 8TDSON
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von BSC026N04LSATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,62 $
0,62 $
10
0,59 $
5,91 $
100
0,56 $
56,01 $
500
0,53 $
264,50 $
1000
0,50 $
497,90 $
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