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DMT8012LFG-7

DMT8012LFG-7
Mfr. #:
DMT8012LFG-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMT8012LFG-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMT8012LFG-7 DatasheetDMT8012LFG-7 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
DMT8012LFG-7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerDI3333-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
9.5 A
Rds On - Drain-Source-Widerstand:
14 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
15 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.2 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
DMT80
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Abfallzeit:
3.5 ns
Produktart:
MOSFET
Anstiegszeit:
3.8 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
16.5 ns
Typische Einschaltverzögerungszeit:
4.9 ns
Gewichtseinheit:
0.002540 oz
Tags
DMT8012LF, DMT801, DMT8, DMT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 9.5A Automotive 8-Pin PowerDI EP T/R
***Components
On a Reel of 2000, DiodesZetex DMT8012LFG-7 MOSFET
***et
Trans MOSFET N-CH 80V 9.5A 8-Pin PowerDI T/R
***i-Key
MOSFET N-CH 80V 9.5A PWDI3333-8
DMTx MOSFETs
Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.
Gate Drivers
Diodes Incorporated Gate Drivers cover a multitude of applications in power systems and motor drives. These gate drivers act as the interface between microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.
Teil # Mfg. Beschreibung Aktie Preis
DMT8012LFG-7
DISTI # C1S205700553595		Diodes IncorporatedTrans MOSFET N-CH 80V 9.5A Automotive 8-Pin PowerDI EP T/R
RoHS: Compliant		2000
  • 2000:$0.5330
DMT8012LFG-7
DISTI # DMT8012LFG-7DITR-ND		Diodes IncorporatedMOSFET N-CH 80V 9.5A PWDI3333-8
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		2000In Stock
  • 2000:$0.4061
DMT8012LFG-7
DISTI # DMT8012LFG-7DICT-ND		Diodes IncorporatedMOSFET N-CH 80V 9.5A PWDI3333-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2000In Stock
  • 1000:$0.4482
  • 500:$0.5677
  • 100:$0.7320
  • 10:$0.9260
  • 1:$1.0500
DMT8012LFG-7
DISTI # DMT8012LFG-7DIDKR-ND		Diodes IncorporatedMOSFET N-CH 80V 9.5A PWDI3333-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2000In Stock
  • 1000:$0.4482
  • 500:$0.5677
  • 100:$0.7320
  • 10:$0.9260
  • 1:$1.0500
DMT8012LFG-7
DISTI # DMT8012LFG-7		Diodes Incorporatedhttps://www.diodes.com/assets/Datasheets/DMT8012LFG.pdf - Tape and Reel (Alt: DMT8012LFG-7)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 2000:$0.3969
  • 4000:$0.3779
  • 8000:$0.3599
  • 12000:$0.3439
  • 20000:$0.3359
DMT8012LFG-7
DISTI # 621-DMT8012LFG-7		Diodes IncorporatedMOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF
RoHS: Compliant		0
  • 1:$0.8700
  • 10:$0.7390
  • 100:$0.5670
  • 500:$0.5020
  • 1000:$0.3960
DMT8012LFG-13
DISTI # 621-DMT8012LFG-13		Diodes IncorporatedMOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF
RoHS: Compliant		0
  • 1:$0.8700
  • 10:$0.7390
  • 100:$0.5670
  • 500:$0.5020
  • 1000:$0.3960
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OMO.#: OMO-ACT45B-510-2P-TL003-TDK

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Mfr.#: CC1210ZKY5V9BB106

OMO.#: OMO-CC1210ZKY5V9BB106-1105

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Mfr.#: ATECC608A-SSHDA-B

OMO.#: OMO-ATECC608A-SSHDA-B-MICROCHIP-TECHNOLOGY

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Verfügbarkeit
Aktie:
15
Auf Bestellung:
1998
Menge eingeben:
Der aktuelle Preis von DMT8012LFG-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,86 $
0,86 $
10
0,74 $
7,39 $
100
0,57 $
56,70 $
500
0,50 $
251,00 $
1000
0,40 $
396,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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