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| PartNumber | DMT8012LFG-7 | DMT8012LFG-13 | DMT8012LFG |
| Description | MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF | MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerDI3333-8 | PowerDI3333-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 9.5 A | 9.5 A | - |
| Rds On Drain Source Resistance | 14 mOhms | 14 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 15 nC | 15 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.2 W | 2.2 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMT80 | DMT80 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 3.5 ns | 3.5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3.8 ns | 3.8 ns | - |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 16.5 ns | 16.5 ns | - |
| Typical Turn On Delay Time | 4.9 ns | 4.9 ns | - |
| Unit Weight | 0.002540 oz | 0.002540 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMT8012LFG-7 | MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF | |
| DMT8012LFG-13 | MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF | ||
| DMT8012LFG | Neu und Original | ||
| DMT8012LFG-7 | Darlington Transistors MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF | ||
| DMT8012LFG-13 | MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF |