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IPD50N03S207ATMA1

IPD50N03S207ATMA1
Mfr. #:
IPD50N03S207ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CHANNEL_30/40V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD50N03S207ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD50N03S207ATMA1 DatasheetIPD50N03S207ATMA1 Datasheet (P4-P6)IPD50N03S207ATMA1 Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Aufbau:
Single
Qualifikation:
AEC-Q101
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Unterkategorie:
MOSFETs
Teil # Aliase:
IPD50N03S2-07 IPD5N3S27XT SP000254462
Gewichtseinheit:
0.139332 oz
Tags
IPD50N03S2, IPD50N03, IPD50N0, IPD50N, IPD50, IPD5, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
30V, N-Ch, 7.3 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
***et
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications
Teil # Mfg. Beschreibung Aktie Preis
IPD50N03S207ATMA1
DISTI # IPD50N03S207ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 50A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.6350
IPD50N03S2-07
DISTI # IPD50N03S2-07		Infineon Technologies AG- Bulk (Alt: IPD50N03S2-07)
Min Qty: 782
Container: Bulk		Americas - 0
  • 7820:$0.5459
  • 3910:$0.5559
  • 2346:$0.5749
  • 1564:$0.5969
  • 782:$0.6189
IPD50N03S207ATMA1
DISTI # IPD50N03S207ATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD50N03S207ATMA1)
RoHS: Compliant
Min Qty: 782
Container: Bulk		Americas - 0
  • 7820:$0.4059
  • 3910:$0.4129
  • 2346:$0.4279
  • 1564:$0.4439
  • 782:$0.4609
IPD50N03S207ATMA1
DISTI # IPD50N03S207ATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD50N03S207ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5479
  • 15000:$0.5579
  • 10000:$0.5779
  • 5000:$0.5999
  • 2500:$0.6219
IPD50N03S207ATMA1
DISTI # SP000254462		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 (Alt: SP000254462)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.5739
  • 15000:€0.6129
  • 10000:€0.6729
  • 5000:€0.7539
  • 2500:€0.9659
IPD50N03S2-07
DISTI # 726-IPD50N03S2-07		Infineon Technologies AGMOSFET N-Ch 30V 50A DPAK-2 OptiMOS
RoHS: Compliant		2313
  • 1:$1.4100
  • 10:$1.2000
  • 100:$0.9280
  • 500:$0.8200
  • 1000:$0.6470
  • 2500:$0.5740
  • 10000:$0.5520
IPD50N03S2-07Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		2457
  • 1000:$0.5700
  • 500:$0.6000
  • 100:$0.6200
  • 25:$0.6500
  • 1:$0.7000
IPD50N03S207ATMA1Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		42500
  • 1000:$0.4200
  • 500:$0.4400
  • 100:$0.4600
  • 25:$0.4800
  • 1:$0.5200
Bild Teil # Beschreibung
IPD50N03S2-07

Mfr.#: IPD50N03S2-07

OMO.#: OMO-IPD50N03S2-07

 MOSFET N-Ch 30V 50A DPAK-2 OptiMOS
IPD50N03S2L-06

Mfr.#: IPD50N03S2L-06

OMO.#: OMO-IPD50N03S2L-06

 MOSFET N-Ch 30V 50A DPAK-2 OptiMOS
IPD50N03S4L-06

Mfr.#: IPD50N03S4L-06

OMO.#: OMO-IPD50N03S4L-06

 MOSFET N-Ch 30V 50A DPAK-2 OptiMOS-T2
IPD50N03S207ATMA1

Mfr.#: IPD50N03S207ATMA1

OMO.#: OMO-IPD50N03S207ATMA1

 MOSFET N-CHANNEL_30/40V
IPD50N03S4L06ATMA1

Mfr.#: IPD50N03S4L06ATMA1

OMO.#: OMO-IPD50N03S4L06ATMA1

 MOSFET N-CHANNEL_30/40V
IPD50N03S2-07

Mfr.#: IPD50N03S2-07

OMO.#: OMO-IPD50N03S2-07-1190

 - Bulk (Alt: IPD50N03S2-07)
IPD50N03S207ATMA1

Mfr.#: IPD50N03S207ATMA1

OMO.#: OMO-IPD50N03S207ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 50A TO252-3
IPD50N03S2L

Mfr.#: IPD50N03S2L

OMO.#: OMO-IPD50N03S2L-1190

 Neu und Original
IPD50N03S4L-06

Mfr.#: IPD50N03S4L-06

OMO.#: OMO-IPD50N03S4L-06-1190

 MOSFET N-Ch 30V 50A DPAK-2 OptiMOS-T2
IPD50N03S4L06ATMA1

Mfr.#: IPD50N03S4L06ATMA1

OMO.#: OMO-IPD50N03S4L06ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 50A TO252-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IPD50N03S207ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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