OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

HGTG5N120BND

HGTG5N120BND
Mfr. #:
HGTG5N120BND
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTG5N120BND Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Teil-Aliasnamen
HGTG5N120BND_NL
Gewichtseinheit
0.225401 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Aufbau
Single
Leistung max
167W
Reverse-Recovery-Time-trr
65ns
Strom-Kollektor-Ic-Max
21A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
NPT
Strom-Kollektor-gepulster-Icm
40A
Vce-on-Max-Vge-Ic
2.7V @ 15V, 5A
Schaltenergie
450μJ (on), 390μJ (off)
Gate-Gebühr
53nC
Td-ein-aus-25°C
22ns/160ns
Testbedingung
960V, 5A, 25 Ohm, 15V
Pd-Verlustleistung
167 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
1200 V
Kollektor-Emitter-Sättigungsspannung
2.45 V
Kontinuierlicher Kollektorstrom-bei-25-C
21 A
Gate-Emitter-Leckstrom
+/- 250 nA
Maximale Gate-Emitter-Spannung
+/- 20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
21 A
Tags
HGTG5N120B, HGTG5, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-247 Rail
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 21A 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
***et
PWR IGBT 21A 1200V NPT N-CHANNEL W/DIODE TO-247
***ser
IGBTs 21a, 1200V, IGBT NPT Series N-Ch
***i-Key
IGBT NPT N-CH 1200V 21A TO-247
*** Source Electronics
IGBT 1200V 21A 167W TO247
***Semiconductor
1200V, NPT IGBT
***ark
DC Collector Current:21A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150�C; Product Range:-; MSL:- RoHS Compliant: Yes
***rchild Semiconductor
HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
***nell
IGBT, 1200V, 21A; Corrente di Collettore CC:21A; Tensione Saturaz Collettore-Emettitore Vce(on):2.7V; Dissipazione di Potenza Pd:167W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018); Corrente Ic Continua a Max:21A; Dissipazione di Potenza Max:167W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Polarità Transistor:Canale N; Temperatura di Esercizio Min:-55°C; Tensione Vces:1.2kV; Tipo di Terminazione:Foro Passante; Tipo di Transistor:No Punch Through (NPT)
Teil # Mfg. Beschreibung Aktie Preis
HGTG5N120BND
DISTI # V36:1790_06301349		ON SemiconductorNPTPIGBT TO247 21A 1200V0
    HGTG5N120BND
    DISTI # HGTG5N120BNDFS-ND    		ON SemiconductorIGBT 1200V 21A 167W TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		235In Stock
    • 1350:$1.4991
    • 900:$1.7775
    • 450:$1.9810
    • 10:$2.5480
    • 1:$2.8400
    HGTG5N120BND
    DISTI # HGTG5N120BND    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 21A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG5N120BND)
    RoHS: Compliant
    Min Qty: 1    		Europe - 1275
    • 100:€1.0900
    • 500:€1.0900
    • 1000:€1.0900
    • 25:€1.1900
    • 50:€1.1900
    • 10:€1.3900
    • 1:€1.4900
    HGTG5N120BND
    DISTI # HGTG5N120BND    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 21A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG5N120BND)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 350
    • 450:$1.0900
    • 900:$1.0900
    • 1800:$1.0900
    • 2700:$1.0900
    • 4500:$1.0900
    HGTG5N120BND.
    DISTI # 16AC0006    		Fairchild Semiconductor CorporationDC Collector Current:21A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes0
    • 2250:$1.5100
    • 1:$1.6100
    HGTG5N120BND
    DISTI # 512-HGTG5N120BND    		ON SemiconductorIGBT Transistors 21a 1200V IGBT NPT Series N-Ch
    RoHS: Compliant    		0
      HGTG5N120BND
      DISTI # HGTG5N120BND      		ON SemiconductorTransistor: IGBT,1.2kV,10A,167W,TO247-394
      • 1:$2.6100
      • 3:$2.3500
      • 10:$2.0800
      • 50:$1.8600
      HGTG5N120BND
      DISTI # XSKDRABV0043248      		ON SEMICONDUCTOR 
      RoHS: Compliant      		2700 in Stock0 on Order
      • 2700:$1.6600
      • 450:$1.7800
      Bild Teil # Beschreibung
      HGTG5N120BND

      Mfr.#: HGTG5N120BND

      OMO.#: OMO-HGTG5N120BND

      		 IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
      HGTG5N120BND

      Mfr.#: HGTG5N120BND

      OMO.#: OMO-HGTG5N120BND-ON-SEMICONDUCTOR

      		 IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
      HGTG5N120BND 5N120BND

      Mfr.#: HGTG5N120BND 5N120BND

      OMO.#: OMO-HGTG5N120BND-5N120BND-1190

      		 Neu und Original
      HGTG5N120BND,G5N120,

      Mfr.#: HGTG5N120BND,G5N120,

      OMO.#: OMO-HGTG5N120BND-G5N120--1190

      		 Neu und Original
      HGTG5N120BND,HGTG10N120B

      Mfr.#: HGTG5N120BND,HGTG10N120B

      OMO.#: OMO-HGTG5N120BND-HGTG10N120B-1190

      		 Neu und Original
      HGTG5N120BND,HGTG10N120BND,10N120BND,5N120BND

      Mfr.#: HGTG5N120BND,HGTG10N120BND,10N120BND,5N120BND

      OMO.#: OMO-HGTG5N120BND-HGTG10N120BND-10N120BND-5N120BND-1190

      		 Neu und Original
      HGTG5N120BND,HGTG5N120CN

      Mfr.#: HGTG5N120BND,HGTG5N120CN

      OMO.#: OMO-HGTG5N120BND-HGTG5N120CN-1190

      		 Neu und Original
      HGTG5N120BNDAB

      Mfr.#: HGTG5N120BNDAB

      OMO.#: OMO-HGTG5N120BNDAB-1190

      		 Neu und Original
      HGTG5N120BND_NL

      Mfr.#: HGTG5N120BND_NL

      OMO.#: OMO-HGTG5N120BND-NL-1190

      		 Neu und Original
      HGTG5N120CND,5N120CND

      Mfr.#: HGTG5N120CND,5N120CND

      OMO.#: OMO-HGTG5N120CND-5N120CND-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von HGTG5N120BND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,64 $
      1,64 $
      10
      1,55 $
      15,53 $
      100
      1,47 $
      147,15 $
      500
      1,39 $
      694,90 $
      1000
      1,31 $
      1 308,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Top