HGTG5N120B

HGTG5N120BND vs HGTG5N120BND 5N120BND vs HGTG5N120BND,G5N120,

 
PartNumberHGTG5N120BNDHGTG5N120BND 5N120BNDHGTG5N120BND,G5N120,
DescriptionIGBT Transistors 21a 1200V IGBT NPT Series N-Ch
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSE--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.45 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C21 A--
Pd Power Dissipation167 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesHGTG5N120BND--
PackagingTube--
Continuous Collector Current Ic Max21 A--
Height20.82 mm--
Length15.87 mm--
Width4.82 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current21 A--
Gate Emitter Leakage Current+/- 250 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesHGTG5N120BND_NL--
Unit Weight0.225401 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HGTG5N120BND IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
ON Semiconductor
ON Semiconductor
HGTG5N120BND IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
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