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IXFP14N60P

IXFP14N60P
Mfr. #:
IXFP14N60P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 600V 14A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFP14N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFP14N60P DatasheetIXFP14N60P Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
IXFP14N60P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
14 A
Rds On - Drain-Source-Widerstand:
550 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
9.15 mm
Länge:
10.66 mm
Serie:
IXFP14N60
Transistortyp:
1 N-Channel
Breite:
4.83 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
13 S
Abfallzeit:
26 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
70 ns
Typische Einschaltverzögerungszeit:
23 ns
Gewichtseinheit:
0.081130 oz
Tags
IXFP14, IXFP1, IXFP, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 600V 14A 3-Pin (3+Tab) TO-220
***ark
MOSFET, N, TO-220; Transistor type:HiPerFET; Voltage, Vds typ:600V; Current, Id cont:14A; Resistance, Rds on:0.55R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5.5V; Case style:TO-220 (SOT-78B); Capacitance, Ciss RoHS Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 550mohm; Threshold Voltage Vgs Typ: 5.5V; Power Dissipation Pd: 300W; Transistor Case Style: TO-220; No. of Pins: 3; Capacitance Ciss Typ: 2300pF; Junction to Case Thermal Resistance A: 0.42°C/W; N-channel Gate Charge: 38nC; Package / Case: TO-220 (SOT-78B); Power Dissipation Pd: 300W; Reverse Recovery Time trr Max: 200ns; Termination Type: Through Hole; Transistor Type: High Performance FET; Voltage Vds Typ: 600V; Voltage Vgs Rds on Measurement: 10V
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFP14N60P
DISTI # IXFP14N60P-ND		IXYS CorporationMOSFET N-CH 600V 14A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		70In Stock
  • 1000:$1.8788
  • 500:$2.2277
  • 100:$2.7511
  • 50:$3.0196
  • 1:$3.7600
IXFP14N60P3
DISTI # IXFP14N60P3-ND		IXYS CorporationMOSFET N-CH 600V 14A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		54In Stock
  • 1000:$1.5400
  • 500:$1.8260
  • 100:$2.2550
  • 50:$2.4750
  • 1:$3.0800
IXFP14N60P
DISTI # 747-IXFP14N60P		IXYS CorporationMOSFET 600V 14A
RoHS: Compliant		0
  • 250:$2.4600
  • 500:$2.3300
  • 1000:$1.9700
  • 2500:$1.6800
IXFP14N60P3
DISTI # 747-IXFP14N60P3		IXYS CorporationMOSFET Polar3 HiPerFETs MOSFET w/Fast Diode76
  • 1:$3.2200
  • 10:$2.8800
  • 25:$2.5000
  • 50:$2.4500
  • 100:$2.3600
  • 250:$2.0100
  • 500:$1.9100
  • 1000:$1.6100
  • 2500:$1.3800
IXFP14N60PIXYS CorporationTrans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-220
RoHS: Compliant		60 In Stock
  • 5000:$1.5500
  • 2500:$1.6100
  • 1000:$1.6900
  • 500:$2.0000
  • 250:$2.2300
  • 100:$2.4800
  • 25:$2.7200
  • 1:$3.0200
IXFP14N60P3
DISTI # 8024420P		IXYS CorporationMOSFET N 600V 14A POLAR3 HIPERFET TO220, TU130
  • 10:£1.6920
  • 50:£1.5780
  • 100:£1.4680
  • 200:£1.3960
IXFP14N60P
DISTI # 1427332		IXYS CorporationMOSFET, N, TO-220
RoHS: Compliant		64
  • 1:£3.3800
  • 10:£2.4200
  • 100:£2.2100
  • 250:£1.8600
  • 500:£1.7600
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IXFP14N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
50
2,99 $
149,50 $
100
2,88 $
288,00 $
250
2,46 $
615,00 $
500
2,33 $
1 165,00 $
1000
1,97 $
1 970,00 $
2500
1,68 $
4 200,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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