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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FZ2400R12KE3B9NOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 3200A I(C), 1200V V(BR)CES, N-Channel RoHS: Not Compliant | 28 |
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| FZ2400R12KE3_B9 DISTI # 641-FZ2400R12KE3_B9 | Infineon Technologies AG | IGBT Modules N-CH 1.2KV 3.2KA | 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FZ2400R17HP4_B29 OMO.#: OMO-FZ2400R17HP4-B29-125 |
IGBT Modules IGBT 1700V 2400A |
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Mfr.#: FZ2400R12KF4-S1 OMO.#: OMO-FZ2400R12KF4-S1-1190 |
Neu und Original |
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Mfr.#: FZ2400R17HE4-B9 OMO.#: OMO-FZ2400R17HE4-B9-1190 |
Neu und Original |
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Mfr.#: FZ2400R17HP4-B29 OMO.#: OMO-FZ2400R17HP4-B29-1190 |
Neu und Original |
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Mfr.#: FZ2400R17HP42400A OMO.#: OMO-FZ2400R17HP42400A-1190 |
Neu und Original |
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Mfr.#: FZ2400R17K3 OMO.#: OMO-FZ2400R17K3-1190 |
Neu und Original |
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Mfr.#: FZ2400R12HE4B9HOSA2 |
IHM-B module with Trench/Fieldstop IGBT and Emitter Controlled diode |
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Mfr.#: FZ2400R17HP4_B28 OMO.#: OMO-FZ2400R17HP4-B28-1190 |
IGBT Modules |
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Mfr.#: FZ2400R17HP4_B28-HPFM |
Gate Driver for Infineon P# FZ2400R17HP4_B28,1700V, 2400A |
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Mfr.#: FZ2400R12KE3B9NOSA1 OMO.#: OMO-FZ2400R12KE3B9NOSA1-1190 |
Insulated Gate Bipolar Transistor, 3200A I(C), 1200V V(BR)CES, N-Channel |