FZ2400R12K

FZ2400R12KE3 vs FZ2400R12KE3-B9 vs FZ2400R12KE3B9NOSA1

 
PartNumberFZ2400R12KE3FZ2400R12KE3-B9FZ2400R12KE3B9NOSA1
DescriptionIGBT Modules 1200V 2400A SINGLEInsulated Gate Bipolar Transistor, 3200A I(C), 1200V V(BR)CES, N-Channel
ManufacturerEUPEC--
Product CategoryModule--
Mounting StyleScrew--
Package CaseIHM 130X140-7--
ConfigurationDual Common Emitter Common Gate--
Pd Power Dissipation10 kW--
Maximum Operating Temperature+ 125 C--
Minimum Operating Temperature- 40 C--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Continuous Collector Current at 25 C2400 A--
Gate Emitter Leakage Current400 nA--
Maximum Gate Emitter Voltage+/- 20 V--
Hersteller Teil # Beschreibung RFQ
FZ2400R12KE3 IGBT Modules 1200V 2400A SINGLE
FZ2400R12KF4 IGBT Modules 1200V 2400A SINGLE
FZ2400R12KL4C IGBT Modules 1200V 2400A SINGLE
FZ2400R12KE3_B9 IGBT Modules N-CH 1.2KV 3.2KA
FZ2400R12KE3-B9 Neu und Original
FZ2400R12KE3_B9_S1 Neu und Original
FZ2400R12KF4-S1 Neu und Original
FZ2400R12KE3B9NOSA1 Insulated Gate Bipolar Transistor, 3200A I(C), 1200V V(BR)CES, N-Channel
FZ2400R12KE3NOSA1 Insulated Gate Bipolar Transistor, 3200A I(C), 1200V V(BR)CES, N-Channel
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