MRF1511NT1

MRF1511NT1
Mfr. #:
MRF1511NT1
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors RF LDMOS FET PLD1.5N
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF1511NT1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MRF1511NT1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
E
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
4 A
Vds - Drain-Source-Durchbruchspannung:
40 V
Gewinnen:
13 dB
Ausgangsleistung:
8 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
PLD-1.5
Verpackung:
Spule
Aufbau:
Single
Höhe:
1.83 mm
Länge:
6.73 mm
Arbeitsfrequenz:
175 MHz
Serie:
MRF1511NT1
Typ:
HF-Leistungs-MOSFET
Breite:
5.97 mm
Marke:
NXP / Freescale
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
62.5 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
20 V
Vgs th - Gate-Source-Schwellenspannung:
1.6 V
Teil # Aliase:
935314119515
Gewichtseinheit:
0.009877 oz
Tags
MRF1511N, MRF1511, MRF151, MRF15, MRF1, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***t
    A***t
    RU

    The order is more than 2 months

    2019-01-24
    Y***g
    Y***g
    KR

    Product description or then dry accurate shipping is too slow oh

    2019-02-17
    S***n
    S***n
    RU

    The goods did not come. It's been more than two months. Money in the process of return for a week.

    2019-04-29
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 8 W, 7.5 V
***ment14 APAC
MOSFET, N, RF, PLD-1.5; Drain Source Voltage Vds:40V; Continuous Drain Current Id:4A; Power Dissipation Pd:62.5W; RF Transistor Case:PLD-1.5; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Gain:13dB; Output Power:8W; Package / Case:PLD-1.5; Power Dissipation Max:62.5W; Termination Type:SMD; Transistor Case Style:PLD-1.5; Transistor Polarity:N Channel; Voltage Vds:400mV
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:4A; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.6V; Package/Case:Case 466 ;RoHS Compliant: Yes
MRF15xx Lateral N-Ch Broadband RF Power MOSFETs
NXP MRF15xx Lateral N-Channel Broadband RF Power MOSFETs are designed for broadband commercial and industrial applications with frequencies of 175 MHz or 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 7.5 volt or 12.5 volt portable FM equipment.Learn More
Teil # Mfg. Beschreibung Aktie Preis
MRF1511NT1
DISTI # V72:2272_07190009
NXP SemiconductorsTrans RF MOSFET N-CH 40V 4A 3-Pin PLD-1.5 T/R
RoHS: Compliant
1913
  • 1000:$6.6210
  • 500:$7.0520
  • 250:$7.4370
  • 100:$8.0450
  • 25:$9.3080
  • 10:$9.6250
  • 1:$10.5230
MRF1511NT1
DISTI # MRF1511NT1CT-ND
NXP SemiconductorsFET RF 40V 175MHZ PLD-1.5
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
920In Stock
  • 500:$7.5271
  • 100:$8.4615
  • 10:$10.0190
  • 1:$10.9000
MRF1511NT1
DISTI # MRF1511NT1DKR-ND
NXP SemiconductorsFET RF 40V 175MHZ PLD-1.5
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
920In Stock
  • 500:$7.5271
  • 100:$8.4615
  • 10:$10.0190
  • 1:$10.9000
MRF1511NT1
DISTI # MRF1511NT1TR-ND
NXP SemiconductorsFET RF 40V 175MHZ PLD-1.5
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 1000:$6.7031
MRF1511NT1
DISTI # 30722677
NXP SemiconductorsTrans RF MOSFET N-CH 40V 4A 3-Pin PLD-1.5 T/R
RoHS: Compliant
1913
  • 1000:$6.6210
  • 500:$7.0520
  • 250:$7.4370
  • 100:$8.0450
  • 25:$9.3080
  • 10:$9.6250
  • 1:$10.5230
MRF1511NT1
DISTI # 26078815
NXP SemiconductorsTrans RF MOSFET N-CH 40V 4A 3-Pin PLD-1.5 T/R
RoHS: Compliant
1000
  • 1:$10.1276
MRF1511NT1
DISTI # 25678100
NXP SemiconductorsTrans RF MOSFET N-CH 40V 4A 3-Pin PLD-1.5 T/R
RoHS: Compliant
1000
  • 1000:$6.4920
MRF1511NT1
DISTI # MRF1511NT1
NXP SemiconductorsTrans MOSFET N-CH 40V 4A 3-Pin PLD-1.5 T/R (Alt: MRF1511NT1)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
  • 1000:$7.1999
  • 2000:$6.9999
  • 3000:$6.8107
  • 5000:$6.6315
  • 10000:$6.5453
  • 25000:$6.4614
  • 50000:$6.2999
MRF1511NT1
DISTI # MRF1511NT1
NXP SemiconductorsTrans MOSFET N-CH 40V 4A 3-Pin PLD-1.5 T/R (Alt: MRF1511NT1)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€5.8900
  • 2000:€5.8900
  • 4000:€5.8900
  • 6000:€5.8900
  • 10000:€5.7900
MRF1511NT1
DISTI # MRF1511NT1
NXP SemiconductorsTrans MOSFET N-CH 40V 4A 3-Pin PLD-1.5 T/R - Tape and Reel (Alt: MRF1511NT1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$7.2900
  • 2000:$6.9900
  • 4000:$6.6900
  • 6000:$6.4900
  • 10000:$6.3900
MRF1511NT1
DISTI # 16N1972
NXP SemiconductorsRF POWER FET, N CHANNEL, 40V, PLD-1.5,Drain Source Voltage Vds:40V,Continuous Drain Current Id:4A,Power Dissipation Pd:62.5W,Operating Frequency Min:135MHz,Operating Frequency Max:175MHz,RF Transistor Case:PLD-1.5 RoHS Compliant: Yes0
  • 1:$10.9000
  • 10:$10.0200
  • 25:$9.5800
  • 50:$9.0300
  • 100:$8.4700
  • 250:$7.5600
  • 500:$7.3100
MRF1511NT1
DISTI # 43K5594
NXP SemiconductorsRF POWER FET, N CHANNEL, 40V, 466-03, FULL REEL,Drain Source Voltage Vds:40V,Continuous Drain Current Id:4A,Power Dissipation Pd:62.5W,Operating Frequency Min:135MHz,Operating Frequency Max:175MHz,RF Transistor Case:PLD-1.5 RoHS Compliant: Yes0
  • 1:$6.7100
  • 1000:$6.7100
MRF1511NT1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RoHS: Compliant
1086
  • 1000:$6.6300
  • 500:$6.9800
  • 100:$7.2700
  • 25:$7.5800
  • 1:$8.1600
MRF1511NT1
DISTI # 841-MRF1511NT1
NXP SemiconductorsRF MOSFET Transistors RF LDMOS FET PLD1.5N
RoHS: Compliant
1447
  • 1:$10.9000
  • 10:$10.0200
  • 25:$9.5800
  • 100:$8.4700
  • 250:$7.5600
  • 500:$7.3100
  • 1000:$6.7100
MRF1511NT1Freescale Semiconductor 1300
    MRF1511NT1
    DISTI # MRF1511NT1
    NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant
    0
    • 1:$10.9300
    • 10:$9.8800
    • 25:$9.3400
    MRF1511NT1
    DISTI # C1S233100285312
    NXP SemiconductorsTrans RF MOSFET N-CH 40V 4A 3-Pin PLD-1.5 T/R
    RoHS: Compliant
    1913
    • 250:$7.4370
    • 100:$8.0450
    • 25:$9.3080
    • 10:$9.6250
    • 1:$10.5230
    MRF1511NT1
    DISTI # C1S537101497926
    NXP SemiconductorsTrans RF MOSFET N-CH 40V 4A 3-Pin PLD-1.5 T/R
    RoHS: Compliant
    1000
    • 1000:$6.4920
    Bild Teil # Beschreibung
    OPA855IDSGR

    Mfr.#: OPA855IDSGR

    OMO.#: OMO-OPA855IDSGR

    High Speed Operational Amplifiers TRANSIMPEDANCE OP AMP
    AFT05MS003NT1

    Mfr.#: AFT05MS003NT1

    OMO.#: OMO-AFT05MS003NT1

    RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
    C1005X5R1V105K050BE

    Mfr.#: C1005X5R1V105K050BE

    OMO.#: OMO-C1005X5R1V105K050BE

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 35V 1.00uF X5R 10% Soft Term
    AFT05MS003NT1

    Mfr.#: AFT05MS003NT1

    OMO.#: OMO-AFT05MS003NT1-NXP-SEMICONDUCTORS

    RF MOSFET Transistors Airfast Wideband RF Power LDMOS Transistor 1.8-941 MHz, 3 W, 7.5V
    DEM-OPA-WSON8-EVM

    Mfr.#: DEM-OPA-WSON8-EVM

    OMO.#: OMO-DEM-OPA-WSON8-EVM-TEXAS-INSTRUMENTS

    DEM-OPA-WSON8-EVM BARE PC BOARD
    EMK316BBJ476ML-T

    Mfr.#: EMK316BBJ476ML-T

    OMO.#: OMO-EMK316BBJ476ML-T-TAIYO-YUDEN

    CAP CER 47UF 16V X5R 1206
    OPA855IDSGR

    Mfr.#: OPA855IDSGR

    OMO.#: OMO-OPA855IDSGR-TEXAS-INSTRUMENTS

    LINEAR OPERATIONAL (OP) AMP
    OPA855DSGEVM

    Mfr.#: OPA855DSGEVM

    OMO.#: OMO-OPA855DSGEVM-TEXAS-INSTRUMENTS

    DEVELOPMENT AMPLIFIER
    88LX2730A0-NYC2C000

    Mfr.#: 88LX2730A0-NYC2C000

    OMO.#: OMO-88LX2730A0-NYC2C000-MAXLINEAR

    IC G.HN CONTROLLER RGMII/SGMII
    Verfügbarkeit
    Aktie:
    766
    Auf Bestellung:
    2749
    Menge eingeben:
    Der aktuelle Preis von MRF1511NT1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    10,90 $
    10,90 $
    10
    10,02 $
    100,20 $
    25
    9,58 $
    239,50 $
    100
    8,47 $
    847,00 $
    250
    7,56 $
    1 890,00 $
    500
    7,31 $
    3 655,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    • PCF85263 CMOS Real-Time Clock
      NXP's tiny real-time clock/calendar is optimized for low power consumption and with automatic switching to battery on main power loss.
    • Compare MRF1511NT1
      MRF1511N vs MRF1511NT vs MRF1511NT1
    • NFC Contactless Readers
      NXP's NFC frontend with an advanced 32-bit microcontroller
    • Smart Charging Solutions
      NXP's smart charging solution consists of a primary side flyback QR controller, a secondary side SR controller, and a protocol controller.
    • FRDM-KL26Z
      FRDM-KL26Z is an ultra-low-cost development platform for Kinetis L series KL16 and KL26 MCUs built on ARM® Cortex™-M0+ processors.
    • Single-Coil Wireless Reference Design
      Design is based on the WPC-A11 transmitter definition, comprising of a 5 VDC input source, full-bridge inverter topology and frequency-control methodology
    Top