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IXFN82N60Q3

IXFN82N60Q3
Mfr. #:
IXFN82N60Q3
Hersteller:
Littelfuse
Beschreibung:
MOSFET N-CH 600V 66A SOT-227
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN82N60Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IXFN82N60Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXFN82N60
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
SMD/SMT
Handelsname
HyperFET
Paket-Koffer
SOT-227-4
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
960 W
Anstiegszeit
300 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
66 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
75 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
275 nC
Tags
IXFN8, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFN82N60Q3
DISTI # V36:1790_15877469		IXYS CorporationTrans MOSFET N-CH 600V 66A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN82N60Q3
    DISTI # IXFN82N60Q3-ND    		IXYS CorporationMOSFET N-CH 600V 66A SOT-227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		24In Stock
    • 100:$34.9950
    • 30:$37.3280
    • 10:$40.3610
    • 1:$43.1600
    IXFN82N60Q3
    DISTI # 747-IXFN82N60Q3    		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
    RoHS: Compliant    		0
    • 1:$43.1600
    • 5:$41.6500
    • 10:$40.3700
    • 25:$37.3300
    • 50:$36.2300
    • 100:$35.0000
    • 200:$32.6700
    Bild Teil # Beschreibung
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    OMO.#: OMO-IXFN80N50P

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    IXFN80N60P3

    Mfr.#: IXFN80N60P3

    OMO.#: OMO-IXFN80N60P3

    		 MOSFET Polar3 HiPerFET Power MOSFET
    IXFN80N50Q3

    Mfr.#: IXFN80N50Q3

    OMO.#: OMO-IXFN80N50Q3

    		 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
    IXFN82N60Q3

    Mfr.#: IXFN82N60Q3

    OMO.#: OMO-IXFN82N60Q3

    		 MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
    IXFN80N10S1

    Mfr.#: IXFN80N10S1

    OMO.#: OMO-IXFN80N10S1-1190

    		 Neu und Original
    IXFN82N60Q3

    Mfr.#: IXFN82N60Q3

    OMO.#: OMO-IXFN82N60Q3-IXYS-CORPORATION

    		 MOSFET N-CH 600V 66A SOT-227
    IXFN80N48

    Mfr.#: IXFN80N48

    OMO.#: OMO-IXFN80N48-IXYS-CORPORATION

    		 MOSFET N-CH 480V 80A SOT-227B
    IXFN80N50Q3

    Mfr.#: IXFN80N50Q3

    OMO.#: OMO-IXFN80N50Q3-IXYS-CORPORATION

    		 MOSFET N-CH 500V 63A SOT-227
    IXFN80N50Q2

    Mfr.#: IXFN80N50Q2

    OMO.#: OMO-IXFN80N50Q2-IXYS-CORPORATION

    		 MOSFET 80 Amps 500V 0.06 Rds
    IXFN80N60P3

    Mfr.#: IXFN80N60P3

    OMO.#: OMO-IXFN80N60P3-IXYS-CORPORATION

    		 MOSFET N-CH 600V 66A SOT-227B
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von IXFN82N60Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    49,00 $
    49,00 $
    10
    46,55 $
    465,55 $
    100
    44,10 $
    4 410,45 $
    500
    41,65 $
    20 827,15 $
    1000
    39,20 $
    39 204,00 $
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