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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFP4N05L DISTI # RFP4N05L | ON Semiconductor | - Bulk (Alt: RFP4N05L) Min Qty: 1 Container: Bulk | Americas - 0 | |
| RFP4N05 | Harris Semiconductor | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 6728 |
|
| RFP4N05L | Harris Semiconductor | 243 |
| |
| RFP4N05L | Intersil Corporation | 41 | ||
| RFP4N05L | Harris Semiconductor | MOSFET Transistor, N-Channel, TO-220AB | 194 |
|
| RFP4N05 | HARTING Technology Group | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 4641 | |
| RFP4N05L | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 27437 | |
| RFP4N05LP2158 | HARTING Technology Group | RoHS: Not Compliant | 812 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RFP40N10 |
MOSFET N-CH 100V 40A TO-220AB |
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Mfr.#: RFP45006 OMO.#: OMO-RFP45006-1190 |
Neu und Original |
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Mfr.#: RFP45N02L OMO.#: OMO-RFP45N02L-1190 |
Power Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP45N06-H8 OMO.#: OMO-RFP45N06-H8-1190 |
Neu und Original |
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Mfr.#: RFP45N06LE OMO.#: OMO-RFP45N06LE-1190 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: RFP45N10 OMO.#: OMO-RFP45N10-1190 |
Neu und Original |
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Mfr.#: RFP47N10 OMO.#: OMO-RFP47N10-1190 |
Neu und Original |
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Mfr.#: RFP4N05LS OMO.#: OMO-RFP4N05LS-1190 |
Neu und Original |
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Mfr.#: RFP4N06L OMO.#: OMO-RFP4N06L-1190 |
Neu und Original |
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Mfr.#: RFP4N40 OMO.#: OMO-RFP4N40-1190 |
Power Field-Effect Transistor, 4A I(D), 400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |