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IXFH16N80P

IXFH16N80P
Mfr. #:
IXFH16N80P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 16 Amps 800V 0.6 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFH16N80P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH16N80P DatasheetIXFH16N80P Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFH16N80P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
16 A
Rds On - Drain-Source-Widerstand:
600 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
71 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
460 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
21.46 mm
Länge:
16.26 mm
Serie:
IXFH16N80
Transistortyp:
1 N-Channel
Typ:
PolarHV Leistungs-MOSFET
Breite:
5.3 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
9 S
Abfallzeit:
29 ns
Produktart:
MOSFET
Anstiegszeit:
32 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
75 ns
Typische Einschaltverzögerungszeit:
27 ns
Gewichtseinheit:
0.229281 oz
Tags
IXFH16N, IXFH16, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 600 mOhm 71 nC Through Hole Power MosFet - TO-247-3
***ical
Trans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD
***ark
MOSFET, N-CH, 800V, 16A, 150DEG C, 460W; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
***S
French Electronic Distributor since 1988
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N-CHANNEL 900V - 0.40͐2;6; - 15A - TO-247 Zener-Protected SuperMESH™ MOSFET
***ure Electronics
N Channel 900 V 0.4 O Flange Mount SuperMESH Power Mosfet - TO-247
***nell
MOSFET, N CH, 900V, 15A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.5A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
***r Electronics
Power Field-Effect Transistor, 15A I(D), 900V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***icroelectronics
N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-247 package
***ure Electronics
Single N-Channel 800 V 190 W 70 nC Silicon Through Hole Mosfet - TO-247-3
***r Electronics
Power Field-Effect Transistor, 17A I(D), 800V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
N CHANNEL POWER MOSFET, MDmesh, 800V, 17A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:190W; MSL:- RoHS Compliant: Yes
***icroelectronics
N-Channel 600 V, 0.48 Ohm, 13 A, TO-247 Zener-Protected SuperMesh(TM) POWER MOSFET
***nell
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.48ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
***r Electronics
Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFH16N80P
DISTI # V99:2348_15877369		IXYS CorporationTrans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		3
  • 2500:$3.5450
  • 1000:$3.7850
  • 500:$4.0800
  • 250:$4.3010
  • 100:$4.9150
  • 50:$5.1240
  • 25:$5.2590
  • 10:$5.9090
  • 1:$6.4870
IXFH16N80P
DISTI # IXFH16N80P-ND		IXYS CorporationMOSFET N-CH 800V 16A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.6377
IXFH16N80P
DISTI # 30341253		IXYS CorporationTrans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		3
  • 2:$6.4870
IXFH16N80P
DISTI # 58M7593		IXYS CorporationMOSFET Transistor, N Channel, 16 A, 800 V, 600 mohm, 10 V, 5 V RoHS Compliant: Yes172
  • 1:$8.0400
  • 10:$7.1900
  • 25:$6.2500
  • 50:$6.1300
  • 100:$5.8900
  • 250:$5.0300
  • 500:$4.7700
IXFH16N80P
DISTI # 747-IXFH16N80P		IXYS CorporationMOSFET 16 Amps 800V 0.6 Rds
RoHS: Compliant		560
  • 1:$8.0400
  • 10:$7.1900
  • 25:$6.2500
  • 50:$6.1300
  • 100:$5.8900
  • 250:$5.0300
  • 500:$4.7700
  • 1000:$4.0300
IXFH16N80P
DISTI # 1427291		IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant		184
  • 1:$12.7300
  • 10:$11.3900
  • 25:$9.9000
  • 50:$9.7100
  • 100:$9.3300
  • 250:$7.9600
  • 500:$7.5500
  • 1000:$6.3800
IXFH16N80P
DISTI # C1S331700014337		IXYS CorporationTrans MOSFET N-CH 800V 16A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		3
  • 1:$6.4870
IXFH16N80P
DISTI # 1427291		IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant		174
  • 1:£8.6800
  • 5:£7.9700
  • 10:£5.7300
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Verfügbarkeit
Aktie:
485
Auf Bestellung:
2468
Menge eingeben:
Der aktuelle Preis von IXFH16N80P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
8,04 $
8,04 $
10
7,19 $
71,90 $
25
5,12 $
128,00 $
50
5,07 $
253,50 $
100
5,05 $
505,00 $
250
5,03 $
1 257,50 $
500
4,77 $
2 385,00 $
1000
4,03 $
4 030,00 $
2500
3,45 $
8 625,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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