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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
BUZ32HXKSA1 DISTI # V36:1790_07549264 | Infineon Technologies AG | Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant | 1384 |
|
BUZ32 H DISTI # BUZ32H-ND | Infineon Technologies AG | MOSFET N-CH 200V 9.5A TO220-3 Min Qty: 1 Container: Tube | 96In Stock |
|
BUZ32 DISTI # BUZ32IN-ND | Infineon Technologies AG | MOSFET N-CH 200V 9.5A TO220AB Min Qty: 500 Container: Tube | Limited Supply - Call | |
BUZ32 E3045A DISTI # BUZ32E3045A-ND | Infineon Technologies AG | MOSFET N-CH 200V 9.5A D2PAK Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
BUZ32H3045AATMA1 DISTI # BUZ32H3045AATMA1-ND | Infineon Technologies AG | MOSFET N-CH 200V 9.5A TO-263 Min Qty: 1000 Container: Tube | Limited Supply - Call | |
BUZ 32 DISTI # BUZ32 | Infineon Technologies AG | Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: BUZ32) RoHS: Not Compliant Min Qty: 463 Container: Bulk | Americas - 0 | |
BUZ32IN DISTI # BUZ32IN | Infineon Technologies AG | - Bulk (Alt: BUZ32IN) Min Qty: 782 Container: Bulk | Americas - 0 |
|
BUZ32HXKSA1 DISTI # BUZ32HXKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 200V 9.5A 3-Pin TO-220 Tube - Bulk (Alt: BUZ32HXKSA1) RoHS: Compliant Min Qty: 610 Container: Bulk | Americas - 0 |
|
BUZ32 | Infineon Technologies AG | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, N-Channel, MOSFET RoHS: Compliant | 132 |
|
BUZ32HXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, N-Channel, MOSFET RoHS: Compliant | 7900 |
|
BUZ323 | Infineon Technologies AG | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, N-Channel, MOSFET RoHS: Not Compliant | 10895 |
|
BUZ32H3045A | Infineon Technologies AG | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, N-Channel, MOSFET RoHS: Compliant | 1249 |
|
BUZ32IN | Infineon Technologies AG | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, N-Channel, MOSFET RoHS: Not Compliant | 64 |
|
BUZ32 | Harris Semiconductor | 200V, N-Channel Power MOSFET RoHS: Not Compliant | 480 |
|
BUZ32 | Siemens | 9.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 60 | |
BUZ32 | Siemens | 9.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 2 |
|
BUZ323 | Siemens | MOSFET Transistor, N-Channel, TO-218AA | 3 |
|
BUZ32 | Siemens | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 133 | |
BUZ32L3045A | Infineon Technologies AG | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 280 | |
BUZ32E3045A | Infineon Technologies AG | RoHS: Not Compliant | Europe - 467 | |
BUZ32E3045 | Infineon Technologies AG | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 470 | |
BUZ32H | Infineon Technologies AG | RoHS: Compliant | Europe - 2000 | |
BUZ32 | ISC | TO-220 | 5000 | |
BUZ325 | ISC | TO-220 | 5000 | |
BUZ323 | ISC | TO-3PN | 5000 | |
BUZ326 | ISC | TO-220 | 5000 |
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: BUZ102SE3045A OMO.#: OMO-BUZ102SE3045A-1190 |
Neu und Original | |
Mfr.#: BUZ21 OMO.#: OMO-BUZ21-1190 |
Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
Mfr.#: BUZ32H OMO.#: OMO-BUZ32H-1190 |
Neu und Original | |
Mfr.#: BUZ32H3045A OMO.#: OMO-BUZ32H3045A-1190 |
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA | |
Mfr.#: BUZ385 OMO.#: OMO-BUZ385-1190 |
Neu und Original | |
Mfr.#: BUZ66 OMO.#: OMO-BUZ66-1190 |
Neu und Original | |
Mfr.#: BUZ77 OMO.#: OMO-BUZ77-1190 |
Neu und Original | |
Mfr.#: BUZ80AFI OMO.#: OMO-BUZ80AFI-1190 |
Neu und Original | |
Mfr.#: BUZ91A SMD OMO.#: OMO-BUZ91A-SMD-1190 |
Neu und Original | |
Mfr.#: BUZ30AH3045A OMO.#: OMO-BUZ30AH3045A-1190 |
Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |