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BSC032N04LSATMA1

BSC032N04LSATMA1
Mfr. #:
BSC032N04LSATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC032N04LSATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC032N04LSATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
98 A
Rds On - Drain-Source-Widerstand:
2.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
35 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 5
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
75 S
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19 ns
Typische Einschaltverzögerungszeit:
4 ns
Teil # Aliase:
BSC032N04LS SP001067018
Tags
BSC032N04, BSC032N0, BSC032, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSC032xx Series 40 V 98 A 22 nC SMT OptiMOS™ Power Mosfet - TDSON-8
***nell
MOSFET, N-CH, 40V, 98A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 98A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 52W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
***ure Electronics
Single N-Channel 40 V 2.7 mOhm 64 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 100A, 40V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:83W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
***ical
Trans MOSFET N-CH 40V 23A Automotive 8-Pin TDSON EP T/R
***nell
MOSFET, N-CH, 40V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 63W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
***ure Electronics
N-Channel 30 V 2.5 mO 74 nC 36 nC Surface Mount OptiMOS Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N-CH, 30V, 100A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***emi
Single N-Channel Power MOSFET 40V, 130A, 2.5mΩ 1500 / Tape & Reel.
***ical
Trans MOSFET N-CH 40V 27A Automotive 5-Pin(4+Tab) SO-FL T/R
***Yang
Trans MOSFET N-CH 40V 127A 5-Pin DFN T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 130A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
REEL / NFET SO8FL 40V 126A 2.8MO
***enic
40V 130A 2m´Î@10V50A 83W 2V@90uA 37pF@25V N Channel 3.1nF@25V [email protected] -55¡Í~+175¡Í@(Tj) DFN-5 MOSFETs ROHS
***el Electronic
RES SMD 34.8K OHM 1% 1/10W 0603
***r Electronics
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH Si 40V 120A Automotive 3-Pin(2+Tab) H2PAK T/R
***icroelectronics
Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package
***el Electronic
Ceramic Capacitors 1000pF Radial, Disc ±10% B Bulk 1 (Unlimited) General Purpose Through Hole -25°C~105°C CAP CER 1000PF 2KV RADIAL
***emi
Single N-Channel Power MOSFET 30V, 102A, 3.6mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks
***ark
Power MOSFET 30V 102A 3.6 mOhm Single N-Channel u8FL / REEL RoHS Compliant: Yes
***Yang
Trans MOSFET N-CH 30V 102A 8-Pin WDFN T/R - Tape and Reel
*** Electronics
MOSFET NFET U8FL 30V 102 A 3.6MOH
***r Electronics
Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
MOSFET, Single N-Channel, 30 V, 102 A
***ment14 APAC
MOSFET'S - SINGLE MOSFET'S TRANSISTORS;
***i-Key
MOSFET N-CH 30V 22A/102A 8WDFN
***enic
30V 102A 2.9m´Î@10V30A 3.2W 2.2V@250uA 71pF@15V N Channel 1.988nF@15V [email protected] -55¡Í~+175¡Í@(Tj) WDFN-8 MOSFETs ROHS
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Teil # Mfg. Beschreibung Aktie Preis
BSC032N04LSATMA1
DISTI # V72:2272_06384348		Infineon Technologies AGTrans MOSFET N-CH 40V 21A 8-Pin TDSON T/R1418
  • 1000:$0.4820
  • 500:$0.5913
  • 250:$0.6447
  • 100:$0.6672
  • 25:$0.8309
  • 10:$0.8409
  • 1:$0.9549
BSC032N04LSATMA1
DISTI # BSC032N04LSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 21A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4837In Stock
  • 1000:$0.6089
  • 500:$0.7713
  • 100:$0.9946
  • 10:$1.2580
  • 1:$1.4200
BSC032N04LSATMA1
DISTI # BSC032N04LSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 21A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4837In Stock
  • 1000:$0.6089
  • 500:$0.7713
  • 100:$0.9946
  • 10:$1.2580
  • 1:$1.4200
BSC032N04LSATMA1
DISTI # BSC032N04LSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 21A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5242
BSC032N04LSATMA1
DISTI # 31077601		Infineon Technologies AGTrans MOSFET N-CH 40V 21A 8-Pin TDSON T/R5000
  • 5000:$0.5261
BSC032N04LSATMA1
DISTI # 26195435		Infineon Technologies AGTrans MOSFET N-CH 40V 21A 8-Pin TDSON T/R1318
  • 1000:$0.4820
  • 500:$0.5913
  • 250:$0.6447
  • 100:$0.6672
  • 25:$0.8309
  • 14:$0.8409
BSC032N04LSATMA1
DISTI # BSC032N04LSATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 98A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC032N04LSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.5159
  • 10000:$0.4969
  • 20000:$0.4789
  • 30000:$0.4629
  • 50000:$0.4549
BSC032N04LSATMA1
DISTI # 13AC8330		Infineon Technologies AGMOSFET, N-CH, 40V, 98A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:98A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes2577
  • 1:$1.1800
  • 10:$1.0100
  • 25:$0.9300
  • 50:$0.8510
  • 100:$0.7710
  • 250:$0.7260
  • 500:$0.6810
  • 1000:$0.5380
BSC032N04LSATMA1Infineon Technologies AGBSC032xx Series 40 V 98 A 22 nC SMT OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant		100Cut Tape/Mini-Reel
  • 1:$0.7200
  • 100:$0.6250
  • 250:$0.6050
  • 500:$0.5900
  • 1500:$0.5500
BSC032N04LS
DISTI # 726-BSC032N04LS		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		7404
  • 1:$1.1800
  • 10:$1.0100
  • 100:$0.7710
  • 500:$0.6810
  • 1000:$0.5380
BSC032N04LSATMA1
DISTI # 726-BSC032N04LSATMA1		Infineon Technologies AGMOSFET MV POWER MOS
RoHS: Compliant		945
  • 1:$1.1800
  • 10:$1.0100
  • 100:$0.7710
  • 500:$0.6810
  • 1000:$0.5380
  • 5000:$0.4770
BSC032N04LSATMA1Infineon Technologies AGPower Field-Effect Transistor, 21A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		2505
  • 1000:$0.4200
  • 500:$0.4400
  • 100:$0.4600
  • 25:$0.4800
  • 1:$0.5200
BSC032N04LSATMA1
DISTI # BSC032N04LSATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,40V,83A,52W,PG-TDSON-84589
  • 1:$0.9997
  • 5:$0.8597
  • 25:$0.6898
  • 100:$0.5992
  • 1000:$0.5578
BSC032N04LSATMA1
DISTI # 2725806		Infineon Technologies AGMOSFET, N-CH, 40V, 98A, TDSON
RoHS: Compliant		4172
  • 5:£1.0900
  • 25:£0.9750
  • 100:£0.7430
BSC032N04LSATMA1
DISTI # C1S322000666498		Infineon Technologies AGMOSFETs1418
  • 250:$0.6600
  • 100:$0.6672
  • 25:$0.8311
  • 10:$0.8409
BSC032N04LSATMA1
DISTI # C1S322000579095		Infineon Technologies AGMOSFETs5000
  • 5000:$0.5360
BSC032N04LSATMA1
DISTI # 2725806		Infineon Technologies AGMOSFET, N-CH, 40V, 98A, TDSON
RoHS: Compliant		2577
  • 1:$2.2700
  • 10:$2.0100
  • 100:$1.5900
  • 500:$1.2300
  • 1000:$0.9710
Bild Teil # Beschreibung
BSC059N04LS6ATMA1

Mfr.#: BSC059N04LS6ATMA1

OMO.#: OMO-BSC059N04LS6ATMA1

 MOSFET
LDL1117S33R

Mfr.#: LDL1117S33R

OMO.#: OMO-LDL1117S33R

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ERA-6AEB9313V

Mfr.#: ERA-6AEB9313V

OMO.#: OMO-ERA-6AEB9313V-PANASONIC

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LDL1117S33R

Mfr.#: LDL1117S33R

OMO.#: OMO-LDL1117S33R-STMICROELECTRONICS

 IC REG LINEAR 3.3V 1.2A SOT223
PHP01206E2001BST5

Mfr.#: PHP01206E2001BST5

OMO.#: OMO-PHP01206E2001BST5-VISHAY

 Thin Film Resistors - SMD 1watt 2Kohms .1% 25 PPM
CRCW06030000Z0EAC

Mfr.#: CRCW06030000Z0EAC

OMO.#: OMO-CRCW06030000Z0EAC-VISHAY-DALE

 RES SMD 0 OHM JUMP 1/10W 0603
CRCW080510K0FKEAC

Mfr.#: CRCW080510K0FKEAC

OMO.#: OMO-CRCW080510K0FKEAC-VISHAY-DALE

 D12/CRCW0805-C 100 10K 1% ET1
CRCW08053K30FKEAC

Mfr.#: CRCW08053K30FKEAC

OMO.#: OMO-CRCW08053K30FKEAC-VISHAY-DALE

 D12/CRCW0805-C 100 3K3 1% ET1
CRCW08050000Z0EAC

Mfr.#: CRCW08050000Z0EAC

OMO.#: OMO-CRCW08050000Z0EAC-VISHAY-DALE

 D12/CRCW0805-C 0R0 ET1 E3
BSC059N04LS6ATMA1

Mfr.#: BSC059N04LS6ATMA1

OMO.#: OMO-BSC059N04LS6ATMA1-INFINEON-TECHNOLOGIES

 TRENCH <= 40V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von BSC032N04LSATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,17 $
1,17 $
10
1,00 $
10,00 $
100
0,77 $
77,10 $
500
0,68 $
340,50 $
1000
0,54 $
538,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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