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| PartNumber | AUIRF2805S | AUIRF2805 | AUIRF2805L |
| Description | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-252-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 135 A | 175 A | - |
| Rds On Drain Source Resistance | 4.7 mOhms | 4.7 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 150 nC | 150 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Pd Power Dissipation | 200 W | 330 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Tube | Tube | - |
| Height | 2.3 mm | 15.65 mm | - |
| Length | 6.5 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 4.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 110 ns | 110 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 120 ns | 120 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 68 ns | 68 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | SP001519486 | SP001517278 | - |
| Unit Weight | 0.139332 oz | 0.211644 oz | - |