 | |  | |
| PartNumber | BSD223P H6327 | BSD223PH6327XTSA1 | BSD223PH6327XTSA1-CUT TAPE |
| Description | MOSFET P-Ch | MOSFET P-Ch DPAK-2 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | PG-SOT-363-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 390 mA | 390 mA | - |
| Rds On Drain Source Resistance | 700 mOhms | 1.2 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 600 mV | - |
| Vgs Gate Source Voltage | 12 V | 4.5 V | - |
| Qg Gate Charge | - 620 pC | - 500 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 250 mW | 250 mW | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 0.9 mm | 0.9 mm | - |
| Length | 2 mm | 2 mm | - |
| Series | BSD223 | BSD223 | - |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Width | 1.25 mm | 1.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 350 mS | 350 mS | - |
| Development Kit | - | - | - |
| Fall Time | 3.2 ns | 3.2 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 5.1 ns | 5.1 ns | - |
| Typical Turn On Delay Time | 3.8 ns | 3.8 ns | - |
| Part # Aliases | BSD223PH6327XT BSD223PH6327XTSA1 SP000924074 | BSD223P BSD223PH6327XT H6327 SP000924074 | - |
| Unit Weight | 0.000265 oz | 0.010582 oz | - |