BSM10GD120DN2 vs BSM10GD120DN2E vs BSM10GD120DN2BOSA1

 
PartNumberBSM10GD120DN2BSM10GD120DN2EBSM10GD120DN2BOSA1
DescriptionIGBT Modules 1200V 10A FL BRIDGEIGBT 2 LOW POWER ECONO2-1
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSN--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.7 V--
Continuous Collector Current at 25 C15 A--
Gate Emitter Leakage Current120 nA--
Pd Power Dissipation80 W--
Package / CaseEconoPACK 2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height17 mm--
Length107.5 mm--
Width45.5 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM10GD120DN2BOSA1 SP000100367--
Unit Weight6.349313 oz--
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