BSM10GD120DN2

BSM10GD120DN2
Mfr. #:
BSM10GD120DN2
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules 1200V 10A FL BRIDGE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSM10GD120DN2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Module
RoHS:
N
Produkt:
IGBT Silizium Module
Aufbau:
Verhexen
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.7 V
Kontinuierlicher Kollektorstrom bei 25 C:
15 A
Gate-Emitter-Leckstrom:
120 nA
Pd - Verlustleistung:
80 W
Paket / Koffer:
EconoPACK 2
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Tablett
Höhe:
17 mm
Länge:
107.5 mm
Breite:
45.5 mm
Marke:
Infineon-Technologien
Montageart:
Chassishalterung
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
10
Unterkategorie:
IGBTs
Teil # Aliase:
BSM10GD120DN2BOSA1 SP000100367
Gewichtseinheit:
6.349313 oz
Tags
BSM10GD12, BSM10GD1, BSM10GD, BSM10G, BSM10, BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    T***j
    T***j
    PL

    Ok

    2019-01-29
    K***i
    K***i
    PL

    Very good qality, fast shipping, weak track and finally unexpeced delivery :)Thank you!

    2019-05-29
    N***v
    N***v
    RU

    Got it. Too long shipping!

    2019-03-06
    Z***d
    Z***d
    PK

    Great Product, Recommended to purchase.

    2019-03-15
***ser
IGBT - Standard Modules 1200V,10A,FL BRIDGE
***omponent
IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate
***nell
IGBT MODULE, 1200V, ECONOPACK3; Transistor type:3-Phase Bridge + NTC Thermistor; Voltage, Vces:1200V; Current, Ic continuous a max:15A; Voltage, Vce sat max:3.2V; Power dissipation:80W; Case style:Econopack 3; Current, Icm pulsed:30A; Power, Pd:80W; Temperature, current:80°C; Temperature, full power rating:25°C; Termination Type:Solder; Transistors, No. of:6; Voltage, Vce sat typ:2.7V; Voltage, Vceo:1200V
Teil # Mfg. Beschreibung Aktie Preis
BSM10GD120DN2BOSA1
DISTI # BSM10GD120DN2BOSA1-ND
Infineon Technologies AGIGBT 2 LOW POWER ECONO2-1
RoHS: Compliant
Min Qty: 10
Container: Tray
Limited Supply - Call
  • 10:$56.9100
BSM10GD120DN2E3224BOSA1
DISTI # BSM10GD120DN2E3224BOSA1-ND
Infineon Technologies AGIGBT 2 LOW POWER ECONO2-1
RoHS: Compliant
Min Qty: 10
Container: Tray
Limited Supply - Call
  • 10:$56.9100
BSM10GD120DN2BOSA1
DISTI # BSM10GD120DN2BOSA1
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 10A nom - Trays (Alt: BSM10GD120DN2BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 10:$50.2900
  • 20:$48.4900
  • 40:$46.7900
  • 60:$45.1900
  • 100:$44.3900
BSM10GD120DN2E3224BOSA1
DISTI # BSM10GD120DN2E3224BOSA1
Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 10A nom T/R - Trays (Alt: BSM10GD120DN2E3224BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray
Americas - 0
  • 10:$50.2900
  • 20:$48.4900
  • 40:$46.7900
  • 60:$45.1900
  • 100:$44.3900
BSM10GD120DN2
DISTI # 61M5051
Infineon Technologies AGIGBT MODULE, 1.2KV, 15A, ECONOPACK2,Transistor Polarity:N Channel,DC Collector Current:15A,Collector Emitter Saturation Voltage Vce(on):2.7V,Power Dissipation Pd:80W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:17Pins RoHS Compliant: Yes8
  • 25:$52.4500
  • 10:$54.2000
  • 5:$56.4000
  • 1:$57.7000
BSM10GD120DN2
DISTI # 641-BSM10GD120DN2
Infineon Technologies AGIGBT Modules 1200V 10A FL BRIDGE
RoHS: Not compliant
0
    BSM10GD120DN2E3224
    DISTI # 641-BSM10GD120DN2E32
    Infineon Technologies AGIGBT Modules N-CH 1.2KV 15A
    RoHS: Compliant
    0
      BSM10GD120DN2Siemens 
      RoHS: Not Compliant
      Europe - 93
        BSM10GD120DN2
        DISTI # 1496947
        Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3
        RoHS: Compliant
        21
        • 50:£41.6300
        • 10:£42.5800
        • 5:£43.5200
        • 1:£44.5200
        BSM10GD120DN2
        DISTI # 1496947
        Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3
        RoHS: Compliant
        16
        • 5:$89.5900
        • 1:$91.3000
        BSM10GD120DN2
        DISTI # C1S322000125876
        Infineon Technologies AGIGBT Chip
        RoHS: Not Compliant
        8
        • 5:$74.6000
        • 1:$87.3000
        Bild Teil # Beschreibung
        BSM10GD120DN2E3224

        Mfr.#: BSM10GD120DN2E3224

        OMO.#: OMO-BSM10GD120DN2E3224

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        BSM10GD120DN2E

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        OMO.#: OMO-BSM10GD120DN2E-1190

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        OMO.#: OMO-BSM10GD120DN2-E3224-1190

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        BSM10GD120DN2BOSA1

        Mfr.#: BSM10GD120DN2BOSA1

        OMO.#: OMO-BSM10GD120DN2BOSA1-INFINEON-TECHNOLOGIES

        IGBT 2 LOW POWER ECONO2-1
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        OMO.#: OMO-BSM10GP120BOSA1-INFINEON-TECHNOLOGIES

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        IGBT Modules 600V 10A PIM
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2000
        Menge eingeben:
        Der aktuelle Preis von BSM10GD120DN2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        57,69 $
        57,69 $
        5
        56,40 $
        282,00 $
        10
        54,19 $
        541,90 $
        25
        52,45 $
        1 311,25 $
        100
        48,60 $
        4 860,00 $
        250
        47,21 $
        11 802,50 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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