BSM10GD

BSM10GD120DN2E3224 vs BSM10GD120DN2 vs BSM10GD120DN2BOSA1

 
PartNumberBSM10GD120DN2E3224BSM10GD120DN2BSM10GD120DN2BOSA1
DescriptionIGBT Modules N-CH 1.2KV 15AIGBT Modules 1200V 10A FL BRIDGEIGBT 2 LOW POWER ECONO2-1
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYN-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationHexHex-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage2.7 V2.7 V-
Continuous Collector Current at 25 C15 A15 A-
Gate Emitter Leakage Current120 nA120 nA-
Pd Power Dissipation80 W80 W-
Package / CaseEconoPACK 2EconoPACK 2-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTrayTray-
Height17 mm17 mm-
Length107.5 mm107.5 mm-
Width45 mm45.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesBSM10GD120DN2E3224BOSA1 SP000100368BSM10GD120DN2BOSA1 SP000100367-
Unit Weight-6.349313 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSM10GD120DN2E3224 IGBT Modules N-CH 1.2KV 15A
BSM10GD120DN2 IGBT Modules 1200V 10A FL BRIDGE
BSM10GD120DN2BOSA1 IGBT 2 LOW POWER ECONO2-1
BSM10GD120DN2E3224BOSA1 IGBT 2 LOW POWER ECONO2-1
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BSM10GD120DN2E Neu und Original
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BSM10GD60DL Neu und Original
BSM10GD60DLC Neu und Original
BSM10GD60DN2 Neu und Original
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BSM10GD120DN2E3224 IGBT Modules N-CH 1.2KV 15A
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