PartNumber | BSM75GAR120DN2 | BSM75GAR120D | BSM75GAR120DN2HOSA1 |
Description | IGBT Transistors 1200V 100A GAR CH | IGBT 2 MED POWER 34MM-1 | |
Manufacturer | Infineon | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | IS4 (34 mm )-5 | - | - |
Mounting Style | Chassis Mount | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2.5 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 100 A | - | - |
Pd Power Dissipation | 625 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tray | - | - |
Height | 30.5 mm | - | - |
Length | 94 mm | - | - |
Width | 34 mm | - | - |
Brand | Infineon Technologies | - | - |
Continuous Collector Current | 105 A | - | - |
Gate Emitter Leakage Current | 400 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 10 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | BSM75GAR120DN2HOSA1 SP000100462 | - | - |
Unit Weight | 5.436423 oz | - | - |