BUL216 vs BUL213 vs BUL213 ( D/C 06 )

 
PartNumberBUL216BUL213BUL213 ( D/C 06 )
DescriptionBipolar Transistors - BJT NPN Hi-Volt Fast SwBipolar Transistors - BJT NPN Hi-Volt Fast Sw
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max800 V600 V-
Collector Base Voltage VCBO1600 V1300 V-
Emitter Base Voltage VEBO9 V9 V-
Collector Emitter Saturation Voltage1 V--
Maximum DC Collector Current4 A3 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBUL216BUL213-
Height9.15 mm (Max)9.15 mm (Max)-
Length10.4 mm (Max)10.4 mm (Max)-
PackagingTubeTube-
Width4.6 mm (Max)4.6 mm (Max)-
BrandSTMicroelectronicsSTMicroelectronics-
Continuous Collector Current4 A3 A-
Pd Power Dissipation90 W60 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.211644 oz0.211644 oz-
DC Current Gain hFE Max-36-
DC Collector/Base Gain hfe Min-16-
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