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| PartNumber | BUL642D2G | BUL62A | BUL62D2 |
| Description | Bipolar Transistors - BJT BIP NPN 3A 825V | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 440 V | - | - |
| Collector Base Voltage VCBO | 825 V | - | - |
| Emitter Base Voltage VEBO | 11 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum DC Collector Current | 11 A | - | - |
| Gain Bandwidth Product fT | 13 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Height | 9.28 mm (Max) | - | - |
| Length | 10.28 mm (Max) | - | - |
| Width | 4.82 mm (Max) | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 3 A | - | - |
| DC Collector/Base Gain hfe Min | 16 | - | - |
| Pd Power Dissipation | 75 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.211644 oz | - | - |