CGHV14250F vs CGHV14250F-TB vs CGHV14250

 
PartNumberCGHV14250FCGHV14250F-TBCGHV14250
DescriptionRF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 WattRF Development Tools Test Board without GaN HEMT
ManufacturerCree, Inc.Cree, Inc.-
Product CategoryRF JFET TransistorsRF Development Tools-
RoHSYN-
Transistor TypeHEMT--
TechnologyGaN--
Gain18.6 dB--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Vgs Gate Source Breakdown Voltage- 10 V to 2 V--
Id Continuous Drain Current18 A--
Output Power330 W--
Maximum Drain Gate Voltage---
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 130 C+ 130 C-
Pd Power Dissipation---
Mounting StyleScrew Mount--
Package / Case440162--
PackagingTubeBulk-
Application---
ConfigurationSingle--
Height3.78 mm--
Length20.45 mm--
Operating Frequency1.2 GHz to 1.4 GHz--
Operating Temperature Range---
ProductGaN HEMTDemonstration Boards-
Width10.29 mm--
BrandWolfspeed / CreeWolfspeed / Cree-
Forward Transconductance Min---
Gate Source Cutoff Voltage---
Class---
Development KitCGHV14250F-TB--
Fall Time---
NF Noise Figure---
P1dB Compression Point---
Product TypeRF JFET TransistorsRF Development Tools-
Rds On Drain Source Resistance---
Rise Time---
Factory Pack Quantity502-
SubcategoryTransistorsDevelopment Tools-
Typical Turn Off Delay Time---
Vgs th Gate Source Threshold Voltage- 3 V--
Type-RF Transistors-
Tool Is For Evaluation Of-CGHV14250F-
Frequency-1.2 GHz to 1.4 GHz-
Operating Supply Voltage---
Description/Function-Demonstration board for CGHV14250F-
Dimensions---
Interface Type---
For Use With-CGHV14250F-
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