PartNumber | CSD16409Q3 | CSD16409 | CSD16409Q3/BKN |
Description | MOSFET N-Ch NexFET Power MOSFETs | ||
Manufacturer | Texas Instruments | TI | - |
Product Category | MOSFET | IC Chips | - |
RoHS | E | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | VSON-Clip-8 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 25 V | - | - |
Id Continuous Drain Current | 100 A | - | - |
Rds On Drain Source Resistance | 9.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 16 V | - | - |
Qg Gate Charge | 4 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2.6 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | NexFET | NexFET | - |
Packaging | Reel | Reel | - |
Height | 1 mm | - | - |
Length | 3.3 mm | - | - |
Series | CSD16409Q3 | CSD16409Q3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.3 mm | - | - |
Brand | Texas Instruments | - | - |
Forward Transconductance Min | 38 S | - | - |
Fall Time | 3.4 ns | 3.4 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 10.6 ns | 10.6 ns | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 6.3 ns | 6.3 ns | - |
Typical Turn On Delay Time | 6.5 ns | 6.5 ns | - |
Unit Weight | 0.001474 oz | - | - |
Package Case | - | VSON-Clip-8 | - |
Pd Power Dissipation | - | 2.6 W | - |
Vgs Gate Source Voltage | - | 16 V | - |
Id Continuous Drain Current | - | 15 A | - |
Vds Drain Source Breakdown Voltage | - | 25 V | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Rds On Drain Source Resistance | - | 9.5 mOhms | - |
Qg Gate Charge | - | 4 nC | - |
Forward Transconductance Min | - | 38 S | - |