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| PartNumber | DMN2040LTS-13 | DMN2040U-13 | DMN2040LSD-13 |
| Description | MOSFET ENHANCE MODE MOSFET DUAL N-CHAN | MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 10K | MOSFET DUAL N-CHANNEL ENHANCEMENT MODE |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSSOP-8 | SOT-23-3 | - |
| Number of Channels | 2 Channel | 1 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 6.7 A | 6 A | - |
| Rds On Drain Source Resistance | 19 mOhms | 25 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | 500 mV | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Qg Gate Charge | 5.2 nC, 5.2 nC | 7.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 890 mW | 1.36 W | - |
| Configuration | Dual | Single | Dual Dual Drain |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Digi-ReelR |
| Product | MOSFET Small Signal | - | - |
| Series | DMN2040 | - | DMN2040 |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | 8 S | - | - |
| Fall Time | 6.1 ns, 6.1 ns | 9.4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13.5 ns, 13.5 ns | 5.1 ns | - |
| Factory Pack Quantity | 2500 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 19.8 ns, 19.8 ns | 21 ns | - |
| Typical Turn On Delay Time | 5.2 ns, 5.2 ns | 3.9 ns | - |
| Unit Weight | 0.005573 oz | 0.000282 oz | 0.030018 oz |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SOP |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 2W |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 562pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 7A |
| Rds On Max Id Vgs | - | - | 26 mOhm @ 6A, 4.5V |
| Vgs th Max Id | - | - | 1.2V @ 250μA |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | - | 2 W |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 7 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 26 mOhms |