FQP7N80C vs FQP7N80 vs FQP7N80C,7N80C,

 
PartNumberFQP7N80CFQP7N80FQP7N80C,7N80C,
DescriptionMOSFET 800V N-Ch Q-FET advance C-SeriesMOSFET NCh/800V/6.6a/1.5Ohm
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V800 V-
Id Continuous Drain Current6.6 A6.6 A-
Rds On Drain Source Resistance1.9 Ohms1.5 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation167 W167 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameQFET--
PackagingTubeTube-
Height16.3 mm16.3 mm-
Length10.67 mm10.67 mm-
SeriesFQP7N80C--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min5.5 S5 S-
Fall Time60 ns55 ns-
Product TypeMOSFETMOSFET-
Rise Time100 ns80 ns-
Factory Pack Quantity100050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time50 ns95 ns-
Typical Turn On Delay Time35 ns35 ns-
Part # AliasesFQP7N80C_NLFQP7N80_NL-
Unit Weight0.063493 oz0.050717 oz-
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