 | |  | |
| PartNumber | IPA80R650CEXKSA2 | IPA80R650CEXKSA1 | IPA80R650CEXKSA1 , 2SD18 |
| Description | MOSFET CONSUMER | MOSFET CONSUMER | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-3 | TO-220FP-3 | - |
| Vds Drain Source Breakdown Voltage | 650 V | 800 V | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Tube | Tube | - |
| Height | 16.15 mm | 16.15 mm | - |
| Length | 10.65 mm | 10.65 mm | - |
| Series | CoolMOS CE | CoolMOS CE | - |
| Width | 4.85 mm | 4.85 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPA80R650CE SP001313394 | IPA80R650CE SP001286432 | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Id Continuous Drain Current | - | 8 A | - |
| Rds On Drain Source Resistance | - | 560 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.1 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 45 nC | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 33 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 10 ns | - |
| Rise Time | - | 15 ns | - |
| Typical Turn Off Delay Time | - | 72 ns | - |
| Typical Turn On Delay Time | - | 25 ns | - |