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| PartNumber | IPB020NE7N3 G | IPB020NE7N3G(020NE7N) | IPB020NE7N3GATMA1 |
| Description | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | MOSFET N-CH 75V 120A TO263-3 | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 155 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 98 S | - | - |
| Fall Time | 22 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 26 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 19 ns | - | - |
| Part # Aliases | IPB020NE7N3GATMA1 IPB2NE7N3GXT SP000676950 | - | - |
| Unit Weight | 0.139332 oz | - | - |