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| PartNumber | IPB029N06N3GATMA1 | IPB029N06N3GE8187ATMA1 | IPB029N06N3 G |
| Description | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 60V 120A D2PAK-2 | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 2.3 mOhms | 2.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 165 nC | 53 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 188 W | 188 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | IPB029N06 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 75 S | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 120 ns | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 62 ns | - | - |
| Typical Turn On Delay Time | 35 ns | - | - |
| Part # Aliases | G IPB029N06N3 IPB29N6N3GXT SP000453052 | E8187 G IPB029N06N3 IPB29N6N3GE8187XT SP000939334 | - |
| Unit Weight | 0.139332 oz | 0.068654 oz | - |