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| PartNumber | IPB65R190CFDA | IPB65R190CFDAATMA1 | IPB65R190CFDA 65F6190A |
| Description | MOSFET N-Ch 650V 57.2A D2PAK-2 | MOSFET N-Ch 650V 57.2A D2PAK-2 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 17.5 A | 17.5 A | - |
| Rds On Drain Source Resistance | 171 mOhms | 171 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 68 nC | 68 nC | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 151 W | 151 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | CoolMOS CFDA | CoolMOS CFDA | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 6.4 ns | 6.4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8.4 ns | 8.4 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 53.2 ns | 53.2 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Part # Aliases | IPB65R190CFDAATMA1 IPB65R19CFDAXT SP000928264 | IPB65R190CFDA IPB65R19CFDAXT SP000928264 | - |
| Unit Weight | 0.077603 oz | 0.068654 oz | - |