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IPB65R190CFDAATMA1

IPB65R190CFDAATMA1
Mfr. #:
IPB65R190CFDAATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 57.2A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB65R190CFDAATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB65R190CFDAATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
17.5 A
Rds On - Drain-Source-Widerstand:
171 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
68 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
151 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
CoolMOS CFDA
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
6.4 ns
Produktart:
MOSFET
Anstiegszeit:
8.4 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
53.2 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
IPB65R190CFDA IPB65R19CFDAXT SP000928264
Gewichtseinheit:
0.068654 oz
Tags
IPB65R190CFDA, IPB65R190CF, IPB65R19, IPB65R1, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650V 190 mOhm 68 nC CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) TO-263 T/R
***et Europe
MOS Power Transistors HV (>= 200V)
***ronik
N-CH 650V 18A 190mOhm TO263-3
***i-Key
MOSFET N-CH TO263-3
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPB65R190CFDAATMA1
DISTI # IPB65R190CFDAATMA1-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.1215
IPB65R190CFDAATMA1
DISTI # IPB65R190CFDAATMA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPB65R190CFDAATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.8900
  • 2000:$1.8900
  • 4000:$1.7900
  • 6000:$1.6900
  • 10000:$1.6900
IPB65R190CFDAATMA1
DISTI # SP000928264		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928264)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 1000:€2.3900
  • 2000:€1.8900
  • 4000:€1.6900
  • 6000:€1.6900
  • 10000:€1.4900
IPB65R190CFDAATMA1
DISTI # IPB65R190CFDA		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPB65R190CFDA)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IPB65R190CFDAATMA1
    DISTI # 726-IPB65R190CFDAATM    		Infineon Technologies AGMOSFET N-Ch 650V 57.2A D2PAK-2
    RoHS: Compliant    		0
    • 1:$3.6500
    • 10:$3.1000
    • 100:$2.6900
    • 250:$2.5500
    • 500:$2.2900
    • 1000:$1.9300
    IPB65R190CFDA
    DISTI # 726-IPB65R190CFDA    		Infineon Technologies AGMOSFET N-Ch 650V 57.2A D2PAK-2
    RoHS: Compliant    		0
    • 1:$3.6500
    • 10:$3.1000
    • 100:$2.6900
    • 250:$2.5500
    • 500:$2.2900
    • 1000:$1.9300
    Bild Teil # Beschreibung
    BSC600N25NS3 G

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    BSC600N25NS3 G

    Mfr.#: BSC600N25NS3 G

    OMO.#: OMO-BSC600N25NS3-G-1190

    		 Trans MOSFET N-CH 250V 25A 8-Pin TDSON T/R (Alt: BSC600N25NS3 G)
    CGA4J2X7R1H104K125AE

    Mfr.#: CGA4J2X7R1H104K125AE

    OMO.#: OMO-CGA4J2X7R1H104K125AE-TDK

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT
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    Mfr.#: CC0805JRNPO9BN220

    OMO.#: OMO-CC0805JRNPO9BN220-YAGEO

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    Mfr.#: C1210X475M5RACAUTO

    OMO.#: OMO-C1210X475M5RACAUTO-KEMET

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von IPB65R190CFDAATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,64 $
    3,64 $
    10
    3,10 $
    31,00 $
    100
    2,68 $
    268,00 $
    250
    2,54 $
    635,00 $
    500
    2,28 $
    1 140,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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