PartNumber | IPB65R190C7ATMA1 | IPB65R190C6ATMA1 | IPB65R190C7ATMA2 |
Description | MOSFET N-Ch 700V 49A D2PAK-2 | MOSFET HIGH POWER_LEGACY | MOSFET N-CH TO263-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Id Continuous Drain Current | 13 A | - | - |
Rds On Drain Source Resistance | 168 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 23 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 72 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Series | CoolMOS C7 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 9 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 11 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 54 ns | - | - |
Typical Turn On Delay Time | 11 ns | - | - |
Part # Aliases | IPB65R190C7 SP000929424 | IPB65R190C6ATMA1 SP000863890 | - |
Unit Weight | 0.068654 oz | 0.139332 oz | - |