IPB65R190C6

Mfr. #:: IPB65R190C6
Hersteller:: Infineon Technologies
Beschreibung:: Darlington Transistors MOSFET N-Ch 700V 20.2A D2PAK-2 CoolMOS C6
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB65R190C6 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Infineon-Technologien

Produktkategorie: Transistoren - FETs, MOSFETs - Single

Serie: CoolMOS C6

Verpackung: Spule

Teil-Aliasnamen: IPB65R190C6ATMA1 IPB65R190C6XT SP000863890

Gewichtseinheit: 0.139332 oz

Montageart: SMD/SMT

Handelsname: CoolMOS

Paket-Koffer: TO-252-3

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: Single

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 151 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 10 ns

Anstiegszeit: 12 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 20.2 A

Vds-Drain-Source-Breakdown-Voltage: 700 V

Rds-On-Drain-Source-Widerstand: 190 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 133 nS

Qg-Gate-Ladung: 73 nC

Tags: IPB65R190C6, IPB65R19, IPB65R1, IPB65, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB65R190C6 Beschreibung

***ical: Trans MOSFET N-CH 700V 20.2A 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO263-3, RoHS

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ure Electronics: E Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK

*** Electronics: MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS

***icroelectronics: N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package

***sible Micro: (CP22-1029) Transistor 650V N-Channel Mosfet D2PAK STB20N65M5

***ure Electronics: N-Channel 710 V 190 mO 36 nC Surface Mount Power Mosfet - TO-263 (D2PAK)

***ical: Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: Single N-Channel 550 V 199 mOhm 45 nC CoolMOS Power Mosfet - TO-263-3

***ical: Trans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ment14 APAC: MOSFET, N-CH, 550V, 17A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:139W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ical: Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK

*** Electronics: VISHAY SIHB20N50E-GE3 MOSFET, N CHANNEL, 500V, 19A, TO-263-3

***ure Electronics: MOSFET 500V Vds 30V Vgs D2PAK (TO-263)

***S: French Electronic Distributor since 1988

***nell: MOSFET, N CHANNEL, 500V, 19A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 179W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited

***ure Electronics: E Series N Channel 600 V 0.158 O 95 nC Surface Mount Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N CH, 600V, 23A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.132ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Pow

***icroelectronics: N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package

***ure Electronics: N-Channel 600 V 22 A 0.15 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB65R190C6ATMA1 DISTI # 30704142	Infineon Technologies AG	Trans MOSFET N-CH 700V 20.2A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	10000	6000:$1.3368 4000:$1.3903 2000:$1.4284 1000:$1.6042
IPB65R190C6ATMA1 DISTI # IPB65R190C6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 20.2A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB65R190C6ATMA1 DISTI # IPB65R190C6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 20.2A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB65R190C6ATMA1 DISTI # IPB65R190C6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 20.2A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB65R190C6ATMA1 DISTI # C1S322000264777	Infineon Technologies AG	Trans MOSFET N-CH 700V 20.2A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	10000	1000:$1.7300
IPB65R190C6 DISTI # 726-IPB65R190C6	Infineon Technologies AG	MOSFET N-Ch 700V 20.2A D2PAK-2 CoolMOS C6 RoHS: Compliant	0	1:$3.0300 10:$2.5700 100:$2.2300 250:$2.1200 500:$1.9000 1000:$1.6000
IPB65R190C6ATMA1 DISTI # N/A	Infineon Technologies AG	MOSFET HIGH POWER_LEGACY	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IPB65R660CFDA OMO.#: OMO-IPB65R660CFDA	MOSFET N-Ch 650V 6A D2PAK-2
	Mfr.#: IPB65R660CFDAATMA1 OMO.#: OMO-IPB65R660CFDAATMA1	MOSFET N-Ch 650V 6A D2PAK-2
	Mfr.#: IPB65R310CFDATMA2 OMO.#: OMO-IPB65R310CFDATMA2-INFINEON-TECHNOLOGIES	LOW POWER_LEGACY
	Mfr.#: IPB65R660CFDAXT OMO.#: OMO-IPB65R660CFDAXT-1190	Trans MOSFET N-CH 650V 6A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB65R660CFDAATMA1)
	Mfr.#: IPB65R110CFDA 65F6110A OMO.#: OMO-IPB65R110CFDA-65F6110A-1190	Neu und Original
	Mfr.#: IPB65R150CFDA OMO.#: OMO-IPB65R150CFDA-1190	Neu und Original
	Mfr.#: IPB65R190C6 65C6190 OMO.#: OMO-IPB65R190C6-65C6190-1190	Neu und Original
	Mfr.#: IPB65R190C7 65C7190 OMO.#: OMO-IPB65R190C7-65C7190-1190	Neu und Original
	Mfr.#: IPB65R420CFDA OMO.#: OMO-IPB65R420CFDA-1190	Neu und Original
	Mfr.#: IPB65R660CFDATMA1 OMO.#: OMO-IPB65R660CFDATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 6A TO263

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3000
Menge eingeben:

Der aktuelle Preis von IPB65R190C6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,40 $~~; ~~2,40 $~~

10: ~~2,28 $~~; ~~22,80 $~~

100: ~~2,16 $~~; ~~216,00 $~~

500: ~~2,04 $~~; ~~1 020,00 $~~

1000: ~~1,92 $~~; ~~1 920,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

IPB65R190C6 4
IPB65R19 15
IPB65R1 34
IPB65 74
IPB6 183
IPB 1339

IPB65R190C6

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes