 |  | | |
| PartNumber | IPB65R190C6ATMA1 | IPB65R190C6 65C6190 | IPB65R190C6 |
| Description | MOSFET HIGH POWER_LEGACY | Darlington Transistors MOSFET N-Ch 700V 20.2A D2PAK-2 CoolMOS C6 | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Configuration | Single | - | Single |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Reel | - | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPB65R190C6ATMA1 SP000863890 | - | - |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Series | - | - | CoolMOS C6 |
| Part Aliases | - | - | IPB65R190C6ATMA1 IPB65R190C6XT SP000863890 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 151 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 12 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 20.2 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Rds On Drain Source Resistance | - | - | 190 mOhms |
| Typical Turn Off Delay Time | - | - | 133 nS |
| Qg Gate Charge | - | - | 73 nC |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB65R190C6ATMA1 | MOSFET HIGH POWER_LEGACY | |
| IPB65R190C6 65C6190 | Neu und Original | ||
| IPB65R190C6S | Neu und Original | ||
| IPB65R190C6 | Darlington Transistors MOSFET N-Ch 700V 20.2A D2PAK-2 CoolMOS C6 | ||
Infineon Technologies |
IPB65R190C6ATMA1 | MOSFET N-CH 650V 20.2A TO263 |