PartNumber | IPD090N03LGATMA1 | IPD090N03L G | IPD090N03LGATMA1-CUT TAPE |
Description | MOSFET N-Ch 30V 40A DPAK-2 | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3 | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 40 A | 40 A | - |
Rds On Drain Source Resistance | 7.5 mOhms | 9 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 15 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 42 W | 42 W | - |
Configuration | Single | Single | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 53 S | - | - |
Fall Time | 2.6 ns | 2.6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3 ns | 3 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | G IPD090N03L IPD9N3LGXT SP000680636 | IPD090N03LGBTMA1 IPD9N3LGXT SP000236950 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Channel Mode | - | Enhancement | - |
Typical Turn Off Delay Time | - | 15 ns | - |
Typical Turn On Delay Time | - | 4 ns | - |