IPD090N03LGATMA1

Mfr. #:: IPD090N03LGATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 30V 40A DPAK-2
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPD090N03LGATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 40 A

Rds On - Drain-Source-Widerstand:: 7.5 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 15 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 42 W

Aufbau:: Single

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 2.3 mm

Länge:: 6.5 mm

Serie:: OptiMOS 3

Transistortyp:: 1 N-Channel

Breite:: 6.22 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 53 S

Abfallzeit:: 2.6 ns

Produktart:: MOSFET

Anstiegszeit:: 3 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Teil # Aliase:: G IPD090N03L IPD9N3LGXT SP000680636

Gewichtseinheit:: 0.139332 oz

Tags: IPD090N03LG, IPD090N03L, IPD090, IPD09, IPD0, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD090N03LGATMA1 Beschreibung

***o-Tech: N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11

***ure Electronics: N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3

***ark: MOSFET, N CHANNEL, 30V, 40A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 2.6 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***et Japan: Transistor MOSFET N-Channel 30V 50A 4-Pin TO-252 T/R

***ment14 APAC: MOSFET, N CH, 50A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ

***ure Electronics: N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA

*** Stop Electro: Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

***nell: MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans MOSFET N-CH 30V 20A 3-Pin (2+Tab) DPAK Rail

***ser: MOSFETs- Power and Small Signal 30V 20A N-Channel

***r Electronics: Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.6V; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:288mJ; Current Id Max:20A; Junction to Case Thermal Resistance A:1.67°C/W; Package / Case:DPAK; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

***ical: Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: N-Channel PowerTrench® MOSFET, 30V, 21A, 35mΩ

***ure Electronics: N-Channel 30 V 35 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***r Electronics: Power Field-Effect Transistor, 21A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***nell: MOSFET, N CH, 30V, 21A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:28W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***des Inc SCT: COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, N+P, 35V VDS, 20±V VGS

***ical: Trans MOSFET N/P-CH 35V 8.6A/7.8A 5-Pin(4+Tab) DPAK T/R

***ark: Mosfet, Dual, N/p-Ch, 35V, 5.3A Rohs Compliant: Yes

***el Electronic: MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K

***ure Electronics: 35V, 13A, N&P CHANNEL, D2PAK-4L

*** Services: CoC and 2-years warranty / RFQ for pricing

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPD090N03LGATMA1 DISTI # V72:2272_06391054	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	161	100:$0.3316 25:$0.4601 10:$0.5623 1:$0.6737
IPD090N03LGATMA1 DISTI # V36:1790_06391054	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0	2500000:$0.1937 1250000:$0.1940 250000:$0.2137 25000:$0.2476 2500:$0.2532
IPD090N03LGATMA1 DISTI # IPD090N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3861In Stock	1000:$0.2878 500:$0.3597 100:$0.4550 10:$0.5940 1:$0.6700
IPD090N03LGATMA1 DISTI # IPD090N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3861In Stock	1000:$0.2878 500:$0.3597 100:$0.4550 10:$0.5940 1:$0.6700
IPD090N03LGATMA1 DISTI # IPD090N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	25000:$0.2212 12500:$0.2270 5000:$0.2357 2500:$0.2532
IPD090N03LGATMA1 DISTI # 32378537	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	161	31:$0.6737
IPD090N03LGXT DISTI # IPD090N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD090N03LGATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 5000	25000:$0.2049 15000:$0.2099 10000:$0.2149 5000:$0.2209 2500:$0.2269
IPD090N03L G DISTI # IPD090N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 40A 3-Pin TO-252 T/R - Bulk (Alt: IPD090N03LGATMA1) RoHS: Compliant Min Qty: 1667 Container: Bulk	Americas - 0	16670:$0.1899 8335:$0.1939 5001:$0.1999 3334:$0.2079 1667:$0.2159
IPD090N03LGATMA1 DISTI # 50Y2025	Infineon Technologies AG	MOSFET Transistor, N Channel, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V RoHS Compliant: Yes	357	1000:$0.2700 500:$0.2920 250:$0.3140 100:$0.3360 50:$0.3980 25:$0.4600 10:$0.5210 1:$0.6260
IPD090N03LGATMA1 DISTI # 726-IPD090N03LGATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 40A DPAK-2 RoHS: Compliant	5138	1:$0.6200 10:$0.5160 100:$0.3330 1000:$0.2670 2500:$0.2250 10000:$0.2170 25000:$0.2080
IPD090N03LGATMA1	Infineon Technologies AG	N-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3 RoHS: Not Compliant	100Cut Tape/Mini-Reel	1:$0.3750 50:$0.2800 100:$0.2700 250:$0.2500 500:$0.2400
IPD090N03LGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant	38680	1000:$0.2000 500:$0.2100 100:$0.2200 25:$0.2300 1:$0.2400
IPD090N03LGATMA1 DISTI # IPD090N03LGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,30A,42W,PG-TO252-3	3204	1000:$0.2399 100:$0.2579 10:$0.2984 3:$0.3705 1:$0.5338
IPD090N03LGATMA1 DISTI # 2480820	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TO-252-3	397	500:£0.2010 250:£0.2290 100:£0.2570 10:£0.4420 1:£0.5470
IPD090N03LGATMA1 DISTI # 2480820	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TO-252-3 RoHS: Compliant	357	1000:$0.3590 500:$0.4140 100:$0.4910 10:$0.6010 1:$0.6900
IPD090N03LGATMA1 DISTI # 2480820RL	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, TO-252-3 RoHS: Compliant	0	1000:$0.3590 500:$0.4140 100:$0.4910 10:$0.6010 1:$0.6900

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von IPD090N03LGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,62 $~~; ~~0,62 $~~

10: ~~0,52 $~~; ~~5,16 $~~

100: ~~0,33 $~~; ~~33,30 $~~

1000: ~~0,27 $~~; ~~267,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPD090N03LGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes