IPD090

IPD090N03LGATMA1 vs IPD090N03L G vs IPD090N03LGBTMA1

 
PartNumberIPD090N03LGATMA1IPD090N03L GIPD090N03LGBTMA1
DescriptionMOSFET N-Ch 30V 40A DPAK-2MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3MOSFET N-CH 30V 40A TO252
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance7.5 mOhms9 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation42 W42 W-
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min53 S--
Fall Time2.6 ns2.6 ns-
Product TypeMOSFETMOSFET-
Rise Time3 ns3 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesG IPD090N03L IPD9N3LGXT SP000680636IPD090N03LGBTMA1 IPD9N3LGXT SP000236950-
Unit Weight0.139332 oz0.139332 oz-
Channel Mode-Enhancement-
Typical Turn Off Delay Time-15 ns-
Typical Turn On Delay Time-4 ns-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD090N03LGATMA1 MOSFET N-Ch 30V 40A DPAK-2
IPD090N03L G MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3
IPD090N03LGATMA1 MOSFET N-CH 30V 40A TO252-3
IPD090N03LGBTMA1 MOSFET N-CH 30V 40A TO252
IPD090N03LGATMA1-CUT TAPE Neu und Original
IPD090N03LGXT Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD090N03LGBTMA1)
IPD090N032 Neu und Original
IPD090N03L Neu und Original
IPD090N03LAG Neu und Original
IPD090N03LG Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD090N03L G MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3
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