 | |  | |
| PartNumber | IPD090N03LGATMA1 | IPD090N03L G | IPD090N03LGBTMA1 |
| Description | MOSFET N-Ch 30V 40A DPAK-2 | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3 | MOSFET N-CH 30V 40A TO252 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 40 A | 40 A | - |
| Rds On Drain Source Resistance | 7.5 mOhms | 9 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 15 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 42 W | 42 W | - |
| Configuration | Single | Single | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 53 S | - | - |
| Fall Time | 2.6 ns | 2.6 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3 ns | 3 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | G IPD090N03L IPD9N3LGXT SP000680636 | IPD090N03LGBTMA1 IPD9N3LGXT SP000236950 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Channel Mode | - | Enhancement | - |
| Typical Turn Off Delay Time | - | 15 ns | - |
| Typical Turn On Delay Time | - | 4 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD096N08N3GATMA1 | MOSFET | |
| IPD090N03LGATMA1 | MOSFET N-Ch 30V 40A DPAK-2 | ||
| IPD090N03L G | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3 | ||
| IPD090N03LGATMA1 | MOSFET N-CH 30V 40A TO252-3 | ||
| IPD090N03LGBTMA1 | MOSFET N-CH 30V 40A TO252 | ||
| IPD096N08N3GATMA1 | MOSFET N-CH 80V 73A | ||
| IPD096N08N3GBTMA1 | MOSFET N-CH 80V 73A TO252-3 | ||
| IPD09N03LA G | MOSFET N-CH 25V 50A DPAK | ||
| IPD09N03LB G | MOSFET N-CH 30V 50A DPAK | ||
Infineon Technologies |
IPD09N03LA G | MOSFET N-Ch 25V 50A DPAK-2 | |
| IPD090N03LGATMA1-CUT TAPE | Neu und Original | ||
| IPD090N03LGXT | Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD090N03LGBTMA1) | ||
| IPD090N032 | Neu und Original | ||
| IPD090N03L | Neu und Original | ||
| IPD090N03LAG | Neu und Original | ||
| IPD090N03LG | Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| IPD096N08N3 G | MOSFET N-Ch 80V 73A DPAK-2 OptiMOS 3 | ||
| IPD096N08N3G | Trans MOSFET N-CH 80V 73A 3-Pin TO-252 T/R - Bulk (Alt: IPD096N08N3G) | ||
| IPD096N08N3GBTMA1 , 2SD2 | Neu und Original | ||
| IPD09N03 | Neu und Original | ||
| IPD09N03L | Neu und Original | ||
| IPD09N03LA | MOSFET Transistor, N-Channel, TO-252AA | ||
| IPD09N03LA(50A 25V) | Neu und Original | ||
| IPD09N03LA-G | Neu und Original | ||
| IPD09N03LAG | 50A, 25V, 0.0148ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | ||
| IPD09N03LAG-09N03LA | Neu und Original | ||
| IPD09N03LB | Neu und Original | ||
| IPD09N03LBG | Neu und Original | ||
| IPD09N03LG | Neu und Original | ||
| IPD09N05 | Neu und Original | ||
| IPD09N30LB | Neu und Original | ||
| IPD09NO3LAG | Neu und Original | ||
| IPD090N03L G | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3 |