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IPD090N03LGATMA1

IPD090N03LGATMA1
Mfr. #:
IPD090N03LGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 40A TO252-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD090N03LGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPD090N03LG, IPD090N03L, IPD090, IPD09, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
N-channel MOSFET Transistor, 40 A, 30 V, 3-pin PG-TO-252-3-11
***ure Electronics
N-Channel 30 V 9 mOhm 15 nC OptiMOS™3 Power-Transistor - TO-252-3
***ark
Mosfet, N Channel, 30V, 40A, To-252; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
IPD090N03LGATMA1
DISTI # V72:2272_06391054		Infineon Technologies AGTrans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		161
  • 100:$0.3316
  • 25:$0.4601
  • 10:$0.5623
  • 1:$0.6737
IPD090N03LGATMA1
DISTI # V36:1790_06391054		Infineon Technologies AGTrans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.1937
  • 1250000:$0.1940
  • 250000:$0.2137
  • 25000:$0.2476
  • 2500:$0.2532
IPD090N03LGATMA1
DISTI # IPD090N03LGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3861In Stock
  • 1000:$0.2878
  • 500:$0.3597
  • 100:$0.4550
  • 10:$0.5940
  • 1:$0.6700
IPD090N03LGATMA1
DISTI # IPD090N03LGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3861In Stock
  • 1000:$0.2878
  • 500:$0.3597
  • 100:$0.4550
  • 10:$0.5940
  • 1:$0.6700
IPD090N03LGATMA1
DISTI # IPD090N03LGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.2212
  • 12500:$0.2270
  • 5000:$0.2357
  • 2500:$0.2532
IPD090N03LGATMA1
DISTI # 32378537		Infineon Technologies AGTrans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		161
  • 31:$0.6737
IPD090N03LGXT
DISTI # IPD090N03LGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD090N03LGATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 5000
  • 25000:$0.2049
  • 15000:$0.2099
  • 10000:$0.2149
  • 5000:$0.2209
  • 2500:$0.2269
IPD090N03L G
DISTI # IPD090N03LGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 40A 3-Pin TO-252 T/R - Bulk (Alt: IPD090N03LGATMA1)
RoHS: Compliant
Min Qty: 1667
Container: Bulk		Americas - 0
  • 16670:$0.1899
  • 8335:$0.1939
  • 5001:$0.1999
  • 3334:$0.2079
  • 1667:$0.2159
IPD090N03LGATMA1
DISTI # 50Y2025		Infineon Technologies AGMOSFET Transistor, N Channel, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V RoHS Compliant: Yes357
  • 1000:$0.2700
  • 500:$0.2920
  • 250:$0.3140
  • 100:$0.3360
  • 50:$0.3980
  • 25:$0.4600
  • 10:$0.5210
  • 1:$0.6260
IPD090N03LGATMA1
DISTI # 726-IPD090N03LGATMA1		Infineon Technologies AGMOSFET N-Ch 30V 40A DPAK-2
RoHS: Compliant		5138
  • 1:$0.6200
  • 10:$0.5160
  • 100:$0.3330
  • 1000:$0.2670
  • 2500:$0.2250
  • 10000:$0.2170
  • 25000:$0.2080
IPD090N03LGATMA1Infineon Technologies AGN-Channel 30 V 9 mOhm 15 nC OptiMOS3 Power-Transistor - TO-252-3
RoHS: Not Compliant		100Cut Tape/Mini-Reel
  • 1:$0.3750
  • 50:$0.2800
  • 100:$0.2700
  • 250:$0.2500
  • 500:$0.2400
IPD090N03LGATMA1Infineon Technologies AGPower Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Not Compliant		38680
  • 1000:$0.2000
  • 500:$0.2100
  • 100:$0.2200
  • 25:$0.2300
  • 1:$0.2400
IPD090N03LGATMA1
DISTI # IPD090N03LGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,30A,42W,PG-TO252-33204
  • 1000:$0.2399
  • 100:$0.2579
  • 10:$0.2984
  • 3:$0.3705
  • 1:$0.5338
IPD090N03LGATMA1
DISTI # 2480820		Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TO-252-3397
  • 500:£0.2010
  • 250:£0.2290
  • 100:£0.2570
  • 10:£0.4420
  • 1:£0.5470
IPD090N03LGATMA1
DISTI # 2480820		Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TO-252-3
RoHS: Compliant		357
  • 1000:$0.3590
  • 500:$0.4140
  • 100:$0.4910
  • 10:$0.6010
  • 1:$0.6900
IPD090N03LGATMA1
DISTI # 2480820RL		Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TO-252-3
RoHS: Compliant		0
  • 1000:$0.3590
  • 500:$0.4140
  • 100:$0.4910
  • 10:$0.6010
  • 1:$0.6900
Bild Teil # Beschreibung
IPD090N03LGATMA1

Mfr.#: IPD090N03LGATMA1

OMO.#: OMO-IPD090N03LGATMA1

 MOSFET N-Ch 30V 40A DPAK-2
IPD090N03L G

Mfr.#: IPD090N03L G

OMO.#: OMO-IPD090N03L-G

 MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3
IPD090N03LGATMA1-CUT TAPE

Mfr.#: IPD090N03LGATMA1-CUT TAPE

OMO.#: OMO-IPD090N03LGATMA1-CUT-TAPE-1190

 Neu und Original
IPD090N03LGXT

Mfr.#: IPD090N03LGXT

OMO.#: OMO-IPD090N03LGXT-1190

 Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD090N03LGBTMA1)
IPD090N032

Mfr.#: IPD090N032

OMO.#: OMO-IPD090N032-1190

 Neu und Original
IPD090N03L

Mfr.#: IPD090N03L

OMO.#: OMO-IPD090N03L-1190

 Neu und Original
IPD090N03LAG

Mfr.#: IPD090N03LAG

OMO.#: OMO-IPD090N03LAG-1190

 Neu und Original
IPD090N03LG

Mfr.#: IPD090N03LG

OMO.#: OMO-IPD090N03LG-1190

 Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD090N03LGATMA1

Mfr.#: IPD090N03LGATMA1

OMO.#: OMO-IPD090N03LGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 40A TO252-3
IPD090N03L G

Mfr.#: IPD090N03L G

OMO.#: OMO-IPD090N03L-G-128

 MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IPD090N03LGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,29 $
0,29 $
10
0,28 $
2,76 $
100
0,26 $
26,15 $
500
0,25 $
123,50 $
1000
0,23 $
232,40 $
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